The surface passivation is an important technique that suppresses the effects of surface dangling bonds on the one-dimensional (1D) nanostructure and changes their electronic …
Z Zhu, Y Song, Z Zhang, H Sun, Y Han, Y Li… - Journal of Applied …, 2017 - pubs.aip.org
We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy at the substrate temperature of∼ 180 C, which is compatible with …
This thesis focuses on the intersection of materials screening, machine learning, and ab- initio calculations, with regards to low dimensional materials-mainly 1D dimensional van der …
K Liu, CS Hwang, JH Choi - Journal of the Korean Physical Society, 2019 - Springer
First-principles calculations were performed to study the atomic and the electronic structures of the oxygen adsorption on the sidewalls of Ge [001] nanowires. For several possible …
The performance of silicon based microelectronic circuit is reaching its end of the roadmap with the shrinking down of transistor critical size. Thus, new material systems are required for …