Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …
the technology for electric energy conversion. Power devices based on wide-bandgap …
Recent progress of Ga2O3 power technology: large-area devices, packaging and applications
Benefitted from progress on the large-diameter Ga 2 O 3 wafers and Ga 2 O 3 processing
techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward …
techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward …
Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride
Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in
photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is …
photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is …
Degradation and recovery of GaN HEMTs in overvoltage hard switching near breakdown voltage
GaN high electron mobility transistors (HEMTs) have limited avalanche capability and
usually fail catastrophically in voltage overshoot up to their dynamic breakdown voltage (BV …
usually fail catastrophically in voltage overshoot up to their dynamic breakdown voltage (BV …
Wide‐bandgap nickel oxide with tunable acceptor concentration for multidimensional power devices
Multidimensional power devices can achieve performance beyond conventional limits by
deploying charge‐balanced p‐n junctions. A key obstacle to developing such devices in …
deploying charge‐balanced p‐n junctions. A key obstacle to developing such devices in …
Output capacitance loss of GaN HEMTs in steady-state switching
The output capacitance () loss, a loss produced when the device's output capacitor is
charged and discharged, has become a concern for GaN high electron mobility transistors …
charged and discharged, has become a concern for GaN high electron mobility transistors …
Power device breakdown mechanism and characterization: Review and perspective
Breakdown voltage (BV) is arguably one of the most critical parameters for power devices.
While avalanche breakdown is prevailing in silicon and silicon carbide devices, it is lacking …
While avalanche breakdown is prevailing in silicon and silicon carbide devices, it is lacking …
An enhancement-mode GaN p-FET with improved breakdown voltage
In this letter, an enhancement-mode (E-mode) GaN p-channel field-effect transistors (p-
FETs) with current density of− 5.6 mA/mm and ratio of 10 6 was demonstrated on a p …
FETs) with current density of− 5.6 mA/mm and ratio of 10 6 was demonstrated on a p …
A review of gan hemt dynamic on-resistance and dynamic stress effects on field distribution
Gallium nitride (GaN) is an emerging wide-bandgap material with superior physical
characteristics, including critical electric field, electron mobility, and specific on-resistance …
characteristics, including critical electric field, electron mobility, and specific on-resistance …