Residual stresses in deposited thin-film material layers for micro-and nano-systems manufacturing

M Huff - Micromachines, 2022 - mdpi.com
This review paper covers a topic of significant importance in micro-and nano-systems
development and manufacturing, specifically the residual stresses in deposited thin-film …

The use of functionally graded poly-SiGe layers for MEMS applications

A Witvrouw, A Mehta - Materials science forum, 2005 - Trans Tech Publ
It is difficult to meet all the different material and economical requirements posed to a MEMS
structural layer that can be integrated with the electronics on the same substrate using a …

Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems

CR Stoldt, VM Bright - Journal of Physics D: Applied Physics, 2006 - iopscience.iop.org
A range of physical properties can be achieved in micro-electro-mechanical systems
(MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews …

Materials issues in the processing, the operation and the reliability of MEMS

A Witvrouw, HAC Tilmans, I De Wolf - Microelectronic Engineering, 2004 - Elsevier
In this article materials issues that arise during the processing and operation of micro-electro
mechanical systems devices (MEMS), and their impact on the functionality and reliability, are …

CMOS-MEMS integration: why, how and what?

A Witvrouw - Proceedings of the 2006 IEEE/ACM international …, 2006 - dl.acm.org
CMOS-MEMS integration can improve the performance of the MEMS (micro-
electromechanical systems), allows for smaller packages and leads to a lower packaging …

Low-thermal-budget electrically active thick polysilicon for CMOS-First MEMS-last integration

A Michael, IYH Chuang, CY Kwok… - Microsystems & …, 2024 - nature.com
Low-thermal-budget, electrically active, and thick polysilicon films are necessary for building
a microelectromechanical system (MEMS) on top of a complementary metal oxide …

Mixed-Substituted Single-Source Precursors for Si1–xGex Thin Film Deposition

B Köstler, F Jungwirth, L Achenbach… - Inorganic …, 2022 - ACS Publications
A series of new mixed-substituted heteronuclear precursors with preformed Si–Ge bonds
has been synthesized via a two-step synthesis protocol. The molecular sources combine …

CMOS–MEMS integration today and tomorrow

A Witvrouw - scripta materialia, 2008 - Elsevier
The integration of complementary metal oxide semiconductor (CMOS) and
microelectromechanical systems (MEMS) can improve the performance of the MEMS, allows …

Pulsed-laser annealing, a low-thermal-budget technique for eliminating stress gradient in poly-SiGe MEMS structures

S Sedky, RT Howe, TJ King - Journal of …, 2004 - ieeexplore.ieee.org
In this paper, we demonstrate eliminating the stress gradient in polycrystalline silicon
germanium films at temperatures compatible with standard CMOS (Al interconnects) …

Poly-SiGe, a superb material for MEMS

A Witvrouw, M Gromova, A Mehta, S Sedky… - MRS Online …, 2003 - cambridge.org
In this overview article several MEMS applications of poly-SiGe are discussed: thermal
applications, the application as a capping layer for MEMS wafer-level packaging and the …