Properties of graphene: a theoretical perspective

DSL Abergel, V Apalkov, J Berashevich… - Advances in …, 2010 - Taylor & Francis
The electronic properties of graphene, a two-dimensional crystal of carbon atoms, are
exceptionally novel. For instance, the low-energy quasiparticles in graphene behave as …

Epitaxial graphenes on silicon carbide

PN First, WA de Heer, T Seyller, C Berger, JA Stroscio… - MRS bulletin, 2010 - Springer
This article reviews the materials science of graphene grown epitaxially on the hexagonal
basal planes of SiC crystals and progress toward the deterministic manufacture of graphene …

Graphene adhesion on MoS 2 monolayer: An ab initio study

Y Ma, Y Dai, M Guo, C Niu, B Huang - Nanoscale, 2011 - pubs.rsc.org
The geometric and electronic structures of graphene adsorption on MoS2 monolayer have
been studied by using density functional theory. It is found that graphene is bound to MoS2 …

Silicene on substrates: a way to preserve or tune its electronic properties

H Liu, J Gao, J Zhao - The Journal of Physical Chemistry C, 2013 - ACS Publications
Silicene, a two-dimensional hexagonal lattice of silicon, has been synthesized recently and
exhibits fascinating electronic properties that resemble graphene. The substrate effect on the …

Electronic structure and optical properties of graphene/stanene heterobilayer

X Chen, R Meng, J Jiang, Q Liang, Q Yang… - Physical Chemistry …, 2016 - pubs.rsc.org
The structural, electronic and optical properties of the graphene hybrid with stanene, the tin
counterpart of graphene, are investigated by means of density functional calculation with the …

Tuning the electron-phonon coupling in multilayer graphene with magnetic fields

C Faugeras, M Amado, P Kossacki, M Orlita… - Physical Review Letters, 2009 - APS
Magneto-Raman scattering study of the E 2 g optical phonons in multilayer epitaxial
graphene grown on a carbon face of SiC is presented. At 4.2 K in magnetic field up to 33 T …

Optimized energy landscape exploration using the ab initio based activation-relaxation technique

E Machado-Charry, LK Béland, D Caliste… - The Journal of …, 2011 - pubs.aip.org
Unbiased open-ended methods for finding transition states are powerful tools to understand
diffusion and relaxation mechanisms associated with defect diffusion, growth processes, and …

Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study

H Zhong, K Xu, Z Liu, G Xu, L Shi, Y Fan… - Journal of Applied …, 2014 - pubs.aip.org
Graphene has been proposed as a material for semiconductor electronic and optoelectronic
devices. Understanding the charge transport mechanisms of graphene/semiconductor …

Effects of pressure, temperature, and hydrogen during graphene growth on SiC (0001) using propane-hydrogen chemical vapor deposition

A Michon, S Vézian, E Roudon, D Lefebvre… - Journal of Applied …, 2013 - pubs.aip.org
Graphene growth from a propane flow in a hydrogen environment (propane-hydrogen
chemical vapor deposition (CVD)) on SiC differentiates from other growth methods in that it …

Inducing electronic changes in graphene through silicon (100) substrate modification

Y Xu, KT He, SW Schmucker, Z Guo, JC Koepke… - Nano …, 2011 - ACS Publications
We have performed scanning tunneling microscopy and spectroscopy (STM/STS)
measurements as well as ab initio calculations for graphene monolayers on clean and …