Quench action approach for releasing the Néel state into the spin-1/2 XXZ chain

M Brockmann, B Wouters, D Fioretto… - Journal of Statistical …, 2014 - iopscience.iop.org
The steady state after a quantum quench from the Néel state to the anisotropic Heisenberg
model for spin chains is investigated. Two methods that aim to describe the postquench non …

Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si

RV Meidanshahi, S Bowden… - Physical Chemistry …, 2019 - pubs.rsc.org
Hydrogen incorporation in the fabrication of amorphous Si (a-Si) plays an important role in
improving its electronic and optical properties. An important question is how H interacts with …

Molecular dynamics simulations using machine learning potential for a-Si: H/c-Si interface: Effects of oxygen and hydrogen on interfacial defect states

T Semba, J McKibbin, R Jinnouchi, R Asahi - Journal of Materials …, 2023 - Springer
Molecular dynamics simulations of a-Si: H/c-Si models with and without an oxygen layer at
the interface were performed using a machine learning potential (MLP) that was efficiently …

Self-sustained cyclic tin induced crystallization of amorphous silicon

VB Neimash, AO Goushcha, PY Shepeliavyi… - Journal of Materials …, 2015 - cambridge.org
Experimental evidences for a recently proposed mechanism of tin-induced crystallization of
amorphous silicon are presented. The mechanism discusses a crystalline phase growth …

Defects in amorphous and organic semiconductors

KW Böer, UW Pohl - Semiconductor Physics, 2023 - Springer
Amorphous and organic semiconductors have strong topological irregularities with respect
to specific ideal structures, which depend on the particular class of such semiconductors …

Self-assembled lead halide perovskite nanocrystals in a perovskite matrix

D Marongiu, X Chang, V Sarritzu, N Sestu… - ACS Energy …, 2017 - ACS Publications
Hybrid metal halide perovskite materials are produced with facile routes, but their
morphology is sensitive to water, oxygen, temperature, and exposure to light. While phase …

Nanocrystals Growth Control during Laser Annealing of Sn:(α‐Si) Composites

V Neimash, P Shepelyavyi, G Dovbeshko… - Journal of …, 2016 - Wiley Online Library
An efficient technique for low temperature metal‐induced nanocrystalline silicon fabrication
is presented. The technique is based on laser annealing of thin films of “amorphous silicon …

Carrier localization in nanocrystalline silicon

L Bagolini, A Mattoni, RT Collins… - The Journal of Physical …, 2014 - ACS Publications
The localization of electronic energy orbitals is computationally examined for silicon
condensed matter composed of crystallites encapsulated within continuous random …

Annealing effects on SiOxNy thin films: Optical and morphological properties

M Perani, N Brinkmann, MA Fazio, A Hammud… - Thin Solid Films, 2016 - Elsevier
The annealing effect on the properties of silicon oxynitride (SiO x N y) thin films has been
investigated. The present contribution aims to study the structural and optical properties of …

Role of Laser Power, Wavelength, and Pulse Duration in Laser Assisted Tin‐Induced Crystallization of Amorphous Silicon

VB Neimash, AO Goushcha… - Journal of …, 2018 - Wiley Online Library
This work describes tin‐induced crystallization of amorphous silicon studied with Raman
spectroscopy in thin‐film structures Si‐Sn‐Si irradiated with pulsed laser light. We have …