In the modern semiconductor industry, there is a growing need to understand and combat
potential radiation damage problems. Space applications are an obvious case, but, beyond …

The sensitivity of collision cascades simulations to the Two-Temperature Model main
parameters is investigated by performing an extensive statistical study both in Si and Ge …

In this study, the low-energy radiation responses of Si, Ge, and Si/Ge superlattice are
investigated by an ab initio molecular dynamics method and the origins of their different …

Primary simulations of neutron interactions are performed on Si 1-x Ge x alloys with a Monte
Carlo (MC) code using the binary collision approximation (BCA). Then, a statistical study of …

Filiitiitiitiitiitii a Si Ge/Si interface there between; amorphizing the SiGe layer at a temperature
greater than T to form an amorphous, graded SiGe layer, and annealing the Structure at a …

AN Larsen et al., MeV ion implantation induced damage in relaxed in Si Ge, J. Appl. Phys.,
vol. 81, 2208 (1997). TE Haynes, et al., Damage accumulation during ion implantation of …

To assess the sensitivity of microelectronic devices to displacement damage, molecular
dynamics simulations of collision cascades in GaN, Si and Ge are performed. We compare …

Examples of growth-and process-induced defects in strain-relaxed Si1− xGex alloy layers
grown epitaxially on Si substrates are reviewed. Recent efforts to reduce the density of …

Successful lateral electrical isolation of silicon 2-D electron gases (2DEGs) at liquid helium
temperature (4.2 K) by ion implantation is demonstrated. The sheet resistance of the …

A single-electron quantum dot device is an ideal environment to demonstrate the concept of
a spin-based quantum bit, a promising candidate to realize a quantum computer. Two …