The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Borophene, a 2D allotrope of boron and the lightest elemental Dirac material, is the latest
very promising 2D material owing to its unique structural and electronic characteristics of the …

Hexagonal boron nitride (h-BN) and semiconducting transition metal dichalcogenides
(TMDs) promise greatly improved electrostatic control in future scaled electronic devices. To …

DOI: 10.1002/adma. 201604230 predicted phonon-limited value (400 cm2 V− 1 s− 1).[6–8]
To get the mobility close to the intrinsic value, it typically requires subtle contact and …

Mechanical exfoliation has been a key enabler of the exploration of the properties of two-
dimensional materials, such as graphene, by providing routine access to high-quality …

Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable
semiconducting materials known. Their unique optical, electronic and mechanical properties …

We report on the fabrication of field-effect transistors based on single layers and bilayers of
the semiconductor WS2 and the investigation of their electronic transport properties. We find …

Two-dimensional hexagonal boron nitride (2D-hBN) is an emerging 2D material that has
received considerable attention due to its exceptional properties including electric …

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDCs) are
promising gas-sensing materials due to their large surface-to-volume ratio. However, their …

Lithium–sulfur (Li–S) chemistry is projected to be one of the most promising for next-
generation battery technology, and controlling the inherent “polysulfide shuttle” process has …