The desire for developing ultraviolet optoelectronic devices has prompted extensive studies
toward wide-bandgap semiconductor ZnO and its related alloys. Bandgap engineering as …

In the field of spintronics, there is a strong demand for barrier materials in magnetic tunnel
junctions (MTJs) having high tunnel magnetoresistance (TMR) and low resistance area …

In this study, we have prepared Mn-doped zinc sulfide diluted magnetic semiconductors with
varying manganese concentrations (x Mn= 0.00, 0.02, 0.04, 0.06, 0.08, 0.10 mol%) using co …

Spin-transfer-torque nano-oscillators are potential candidates for replacing the traditional
inductor-based voltage-controlled oscillators in modern communication devices. Typical …

We propose a high-performance magnetic tunnel junction by making electronic analogs of
optical phenomena such as anti-reflections and Fabry-Pèrot resonances. The devices we …

Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe (001) magnetic tunnel
junctions (MTJs) were fabricated by magnetron sputtering. A tunnel magnetoresistance …

In this paper, we have presented a theoretical study of the optical properties for the cubic Mg
x Zn 1− x O (x= 0.0, 0.125, 0.375, 0.625, 0.875 and 1.0) alloys using the full-potential …

We report on the fabrication and characterization of vertical tunnel heterojunctions in which
sublimated phthalocyanine (Pc) films (H2Pc, CoPc, and MnPc) as thin as 1 nm are …

Stateful logic circuits based on next-generation nonvolatile memories, such as
magnetoresistance random access memory (MRAM), promise to break the long-standing …

First principles investigations are performed to understand the spin-polarized transport in
Magnetic Tunnel Junctions (MTJs) consisting of an out-of-plane graphene sheet as a barrier …