Memristor‐based electronic memory have recently started commercialization, although its
market size is small (~ 0.5%). Multiple studies claim their potential for hardware …

In small‐area transistors, the trapping/detrapping of charge carriers to/from a single trap
located in the gate oxide near the Si/SiO2 interface leads to the discrete switching of the …

In this work, we experimentally investigate the impact of electrical stress on the tunability of
single hole transport properties within a p-type silicon MOSFET at a temperature of T= 2 K …

We present a novel approach for calculating the Coulomb blockade phase diagram (CBPD)
in the experimentally accessible strong coupling regime of a single-electron transistor. Our …

While the importance of atomic-scale features in silicon-based device for quantum
application has been recognized and even the placement of a single atom is now feasible …

The need for hardware random number generators (HRNGs) that can be integrated in a
silicon (Si) complementary-metal–oxide–semiconductor (CMOS) platform has become …

This review is devoted to the single molecule toroics as an implementation of the Pierre
Curie's visionary idea about the magnetoelectric molecules that are now considered as a …