Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Ever since two dimensional-transition (2D) metal dichalcogenides (TMDs) were discovered,
their fascinating electronic properties have attracted a great deal of attention for harnessing …

Two-dimensional (2D) crystal semiconductors, such as the well-known molybdenum
disulfide (MoS 2), are witnessing an explosion in research activities due to their apparent …

As one of the thinnest forms of semiconducting silicon, monolayer (ML) silicane has not only
excellent gate electrostatics and carrier transport ability, but also compatibility with well …

We perform a first-principle computation on the magnetic properties of 3d transition metal
(TM)-doped silicane. All the substituted systems are energetically stable. Robust half …

Based on first-principles method, the electron structure of porous graphene (PG) and
adsorption ability of H 2 molecular on Y-decorated porous graphene are investigated using …

Over the last few years, ab initio methods have become an increasingly popular tool to
evaluate intrinsic carrier transport properties in 2D semiconductors. The lack of experimental …

We present a detailed first-principles study on phonon-limited electronic transport in
germanane and hexagonal boron nitride (h-BN). We find a high electron mobility of 2380 cm …

The structural and electronic properties of silicane layers and bulk, the effects of a biaxial
tensile strain and an external electric field (E-field) on the electronic properties of silicane …

Using first-principles calculations, we investigated the geometric structure, binding energy,
and magnetic behavior of monolayer germanane substitutional doped with transition metals …