Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic
devices for computing and data storage, but also for emerging technologies such as related …

Featured Application Metal gate of CMOS devices. Abstract The continuous down-scaling of
complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been …

SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb (NMe2)
3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can …

The optical quality Hf x Ti 1− x O 2 films with a wide range of the Hf/Ti ratio were prepared on
Si (100) substrates by the ALD method with the use of tetrakis (ethylmethylamido) hafnium …

Tailoring the work function of metal gates at a low temperature is critical to the electronic
performance of advanced nanoscale MOSFET devices. In this paper, the work function of …

The pollution of waste water due to organic dyes used in textile and chemical industries is
an important environmental issue. Inverse opals (IO) offer a great potential for increasing the …

Dry cleaning technology is an essential technique that can be applied to remove native
oxide and various contaminants during the semiconductor manufacturing for nanoscale …

All-solid-state lithium-ion batteries that use sulfide solid electrolytes have attracted much
attention due to their high safety and wide electrochemical window. In this study, highly …

The atomic layer deposition method was used for coating the high-density material on the
inner surface of a tapered glass monocapillary X-ray condenser (TGMXC). In this paper, HfO …

This paper reports on the optimization of the device and wiring in a via structure applied to
multilevel metallization (MLM) used in CMOS logic devices. A MLM via can be applied to the …