Understanding quantum confinement in nanowires: basics, applications and possible laws

NS Mohammad - Journal of Physics: Condensed Matter, 2014 - iopscience.iop.org
A comprehensive investigation of quantum confinement in nanowires has been carried out.
Though applied to silicon nanowires (SiNWs), it is general and applicable to all nanowires …

Charge optimized many-body (COMB) potential for Al2O3 materials, interfaces, and nanostructures

K Choudhary, T Liang, A Chernatynskiy… - Journal of Physics …, 2015 - iopscience.iop.org
This work presents the development and applications of a new empirical, variable charge
potential for Al 2 O 3 systems within the charge optimized many-body (COMB) potential …

Exploring defect behavior and size effects in micron-scale germanium from cryogenic to elevated temperatures

M Chen, AS Sologubenko, JM Wheeler - Matter, 2023 - cell.com
Germanium displays enhanced carrier mobility under mechanical straining, which makes it
an important material for optoelectronics and ultrafast semiconductor devices. However, it is …

Stress-induced formation mechanism of stacking fault tetrahedra in nano-cutting of single crystal copper

Q Wang, Q Bai, J Chen, Y Guo, W Xie - Applied Surface Science, 2015 - Elsevier
Stacking fault tetrahedra commonly existed in subsurface of deformed face center cubic
metals, has great influence on machining precision and surface roughness in nano-cutting …

[HTML][HTML] Exploring the transfer of plasticity across Laves phase interfaces in a dual phase magnesium alloy

J Guénolé, M Zubair, S Roy, Z Xie… - Materials & Design, 2021 - Elsevier
The mechanical behaviour of Mgsingle bondAl alloys can be largely improved by the
formation of an intermetallic Laves phase skeleton, in particular the creep strength. Recent …

Atomistic amorphous/crystalline interface modelling for superlattices and core/shell nanowires

A France-Lanord, E Blandre, T Albaret… - Journal of Physics …, 2014 - iopscience.iop.org
In this paper we present a systematic and well controlled procedure for building atomistic
amorphous/crystalline interfaces in silicon, dedicated to the molecular dynamics simulations …

Size-induced twinning in InSb semiconductor during room temperature deformation

F Mignerot, B Kedjar, H Bahsoun, L Thilly - Scientific Reports, 2021 - nature.com
Room-temperature deformation mechanism of InSb micro-pillars has been investigated via a
multi-scale experimental approach, where micro-pillars of 2 µm and 5 µm in diameter were …

Uniting Ultrahigh Plasticity with Near‐Theoretical Strength in Submicron‐Scale Si via Surface Healing

W Xu, J Yu, J Ding, Y Guo, L Deng… - Advanced Functional …, 2024 - Wiley Online Library
As a typical hard but brittle material, Si tends to fracture abruptly at a stress well below its
theoretical strength, even if the tested volume goes down to submicron scale, at which …

Atomistic simulations of focused ion beam machining of strained silicon

J Guénolé, A Prakash, E Bitzek - Applied Surface Science, 2017 - Elsevier
The focused ion beam (FIB) technique has established itself as an indispensable tool in the
material science community, both to analyze samples and to prepare specimens by FIB …

Atomistic Origins of Ductility Enhancement in Metal Oxide Coated Silicon Nanowires for Li‐Ion Battery Anodes

A Gao, S Mukherjee, I Srivastava… - Advanced Materials …, 2017 - Wiley Online Library
Silicon nanowires (SiNWs) are a promising anode material for Li‐ion batteries due to their
exceptionally high charge capacity. However, direct implementation is hindered by large …