In this letter, the AlGaN/GaN/graded-AlGaN: Si-doped/GaN double channel (GDC-SI) high
electronic mobility transistors (HEMTs) with high saturation current density and linearity have …

Through this paper, we exhibit the effects of electric and magnetic fields on the linear and
third-order nonlinear optical absorption coefficients (OACs) in symmetric InGaN/GaN double …

In this paper, a surface potential-based terminal charge and capacitance model, including
parasitic components for AlGaN/GaN HEMTs is developed. First, by solving the charge …

Enhancement-mode (E-mode) AlGaN/GaN heterojunction field effect transistors (HFETs)
with a nominal gate length of 0.35 μm are fabricated on a SiC substrate by fluorine plasma …

By combining a low damage chlorine based gate-recess etching and a sophisticated
technology for AlGaN/GaN depletion-mode high electron mobility transistors (HEMTs) we …

A compound semiconductor device having a transistor structure, includes a substrate, a first
layer formed on the substrate and comprising GaN, a second layer formed over the first layer …

To fabricate AlGaN/gallium nitride (GaN) enhancement-mode metal-oxide-semiconductor
high-electron mobility transistors (E-MOSHEMTs), the gate-recessed structure and the …

The linearity and radio frequency (RF) performance of a proposed graded-channel HEMT
incorporating an InGaN back-barrier layer is investigated by an Atlas simulator. A W-like …

In this letter, we present high-performance tri-gate normally-off HEMTs RF power devices
using MOCVD-grown thin barrier SiN/AlN/GaN heterostructures. The normally-off devices …

Researches on prototype AlGaN/GaN transistors provided evidence for their tolerance to
cumulated dose effects. However, only few studies have been done to evaluate their …