High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K
T He, X Yang, Y Tang, R Wang… - Journal of Semiconductors, 2022 - iopscience.iop.org
Abstract Planar semiconductor InGaAs/InP single photon avalanche diodes with high
responsivity and low dark count rate are preferred single photon detectors in near-infrared …
responsivity and low dark count rate are preferred single photon detectors in near-infrared …
Common-mode cancellation in sinusoidal gating with balanced InGaAs/InP single photon avalanche diodes
We demonstrate a sinusoidal-gated InGaAs/InP single photon avalanche diode (SPAD) pair
with high photon detection efficiency (PDE) and low dark count rate (DCR). The photodiode …
with high photon detection efficiency (PDE) and low dark count rate (DCR). The photodiode …
Multi-Channel Gating Chip in 0.18 µm High-Voltage CMOS for Quantum Applications
C Ribisch, M Hofbauer, SS Kohneh Poushi, A Zimmer… - Sensors, 2023 - mdpi.com
A gating circuit for a photonic quantum simulator is introduced. The gating circuit uses a
large excess bias voltage of up to 9.9 V and an integrated single-photon avalanche diode …
large excess bias voltage of up to 9.9 V and an integrated single-photon avalanche diode …
Balanced InGaAs/InP avalanche photodiodes for single photon detection
Z Lu, W Sun, X Zheng, J Campbell… - … and Nanomedicine V, 2012 - spiedigitallibrary.org
We demonstrate a sinusoidally-gated InGaAs/InP photodiode pair operated at wavelength of
1310 nm with high photon detection efficiency (PDE) and low dark count rate (DCR). The …
1310 nm with high photon detection efficiency (PDE) and low dark count rate (DCR). The …
InGaAs/InP Single Photon Avalanche Diodes
We propose and demonstrate balanced detectors to improve the performance of sine wave
gated single photon avalanche diodes (SPADs). This technique can realize continuous …
gated single photon avalanche diodes (SPADs). This technique can realize continuous …