Ferroelectric materials have been known for decades for their exclusive non-
centrosymmetric crystalline structures and their unique property of switchable spontaneous …

The piezoelectric response in polycrystalline films of doped ferroelectric HfO2 has been
explored so far; however, the lack of texture in most of the studied films prevents its full …

Abstract A heterostructure BiFeO 3/TiO 2 (Nt) Ti (BFOT) was obtained by the atomic layer
deposition (ALD) method. After thermal treatment, the redistribution of Fe/Ti atoms forms an …

The piezoelectric response in hafnia is of interest because it is a CMOS-compatible material.
It is known that polarization depends on the stabilization of the orthorhombic phase, which …

Ferroelectrics show promise for low‐power, non‐volatile memory technologies. However,
material challenges in state‐of‐the‐art ferroelectric hafnates and the high coercive fields …

Ferroelectric doped hafnium oxide constitutes, at present, an intensively investigated
candidate material to develop outperforming non-volatile memory devices. We report …

The ability to prepare single crystalline complex oxide freestanding membranes has opened
a new playground to access new phases and functionalities not available when they are …

Piezoresponse force microscopy (PFM) is one of the most widespread methods for
investigating and visualizing ferroelectric domain structures down to the nanometer length …

Next-generation synaptic devices with multiple non-volatile states, high endurance and high-
temperature operation are highly desired in the era of big data. Here, high-performance …

In the presence of asymmetric potential barriers, such as those created by imprint fields,
ferroelectric polarization can be reversed by light due to the photoinduced suppression of …