Domain-Specific STT-MRAM-based In-Memory Computing: A Survey
A Yusuf, T Adegbija, D Gajaria - IEEE Access, 2024 - ieeexplore.ieee.org
In recent years, the rapid growth of big data and the increasing demand for high-
performance computing have fueled the development of novel computing architectures …
performance computing have fueled the development of novel computing architectures …
Bimodal alteration of cognitive accuracy for spintronic artificial neural networks
Spintronics-based artificial neural networks (ANNs) exhibiting nonvolatile, fast, and energy-
efficient computing capabilities are promising neuromorphic hardware for performing …
efficient computing capabilities are promising neuromorphic hardware for performing …
Variation Tolerant RRAM Based Synaptic Architecture for On-Chip Training
A Dongre, G Trivedi - IEEE Transactions on Nanotechnology, 2023 - ieeexplore.ieee.org
Neuromorphic computing has emerged as a better alternative for developing next-
generation artificial intelligent systems. Resistive Random Access Memory (RRAM) have …
generation artificial intelligent systems. Resistive Random Access Memory (RRAM) have …
Computing in-memory with cascaded spintronic devices for AI edge
Spin-transfer-torque magnetic random access memory (STT-MRAM) shows great
advantages for computing in-memory (CIM), which has emerged as a popular research …
advantages for computing in-memory (CIM), which has emerged as a popular research …
[PDF][PDF] 基于铁电晶体管的存储与存算一体电路
刘勇， 李泰昕， 祝希， 杨华中， 李学清 - 电子与信息学报, 2023 - jeit.ac.cn
近年来, 物联网和人工智能等技术的发展对片上存储与智能计算的能效, 密度以及性能提出了更
高的要求. 面对传统CMOS 处理器的能效与密度瓶颈, 以及传统冯· 诺伊曼架构的“存储墙” 瓶颈 …
高的要求. 面对传统CMOS 处理器的能效与密度瓶颈, 以及传统冯· 诺伊曼架构的“存储墙” 瓶颈 …
Dynamic Time-Domain Sensing Scheme for Spin-Orbit Torque MRAM
While spin-orbit torque magnetic random access memory (SOT-MRAM) have shown huge
potential for building next-generation embedded memory due to their attractive …
potential for building next-generation embedded memory due to their attractive …
Area-Aware Optimization of MRAM Crossbar Array Bit-Cell for In-Memory Computing
C Wang, Z Wang, Z Zhang, Y Zhang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Recently, the crossbar array chip based on spin-transfer-torque magnetoresistive random
access memory (STT-MRAM) has been proposed for in-memory computing (IMC), which …
access memory (STT-MRAM) has been proposed for in-memory computing (IMC), which …
Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors
Recently, with the development of the Internet of Things and Artificial Intelligence, higher
energy efficiency, density, and performance in on-chip memories and intelligent computing …
energy efficiency, density, and performance in on-chip memories and intelligent computing …
[PDF][PDF] Developing a high-capacity, nonvolatile spintronic associative memory hardware accelerator: Innovations and implications
YB Choi, Y Kim - 2024 - circuitsjournal.com
This paper introduces the development of a high-capacity, nonvolatile Spintronic Associative
Memory Hardware Accelerator, showcasing a pioneering approach to memory technology …
Memory Hardware Accelerator, showcasing a pioneering approach to memory technology …