Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits
W Choi, KK O - ACS photonics, 2024 - ACS Publications
Over the past 15 years, the output power of silicon submillimeter-wave electronics has
increased by a factor greater than 1000 reaching− 3.9 dBm at 440 GHz for a single unit in …
increased by a factor greater than 1000 reaching− 3.9 dBm at 440 GHz for a single unit in …
A Survey on Advancements in THz Technology for 6G: Systems, Circuits, Antennas, and Experiments
Terahertz (THz) carrier frequencies (100 GHz to 10 THz) have been touted as a source for
unprecedented wireless connectivity and high-precision sensing, courtesy of their wide …
unprecedented wireless connectivity and high-precision sensing, courtesy of their wide …
Silicon Technology Innovation Opportunities for Applications at 0.1 to 1 THz Beyond that for Transistors
The smaller wavelengths and wide frequency bands that can be allocated at 0.1 to 1 THz
hold the promise for enabling radar imaging in visually impaired conditions with an angular …
hold the promise for enabling radar imaging in visually impaired conditions with an angular …
10-GSymbols/s Supply Modulated 250-GHz SiGe HBT Transmitter RF Front-End with 6.8-dBm Peak Modulated Power
A 250-GHz SiGe HBT (fT and f_max of 300~GHz and 450 GHz) transmitter RF front-end
using supply modulation at 10GSymbols/s along with a 16-customized-APSK (APSK _c) …
using supply modulation at 10GSymbols/s along with a 16-customized-APSK (APSK _c) …
A 6.3 dBm 258-314 GHz Power Amplifier using a Broadband 8-way SQWL Power Combiner in 130-nm SiGe BiCMOS Technology
In this paper, a 258-314 GHz power amplifier fabricated in a 130 nm SiGe BiCMOS
technology with f_t/f_max=350/450GHz is presented. The PA employs 4 cascode …
technology with f_t/f_max=350/450GHz is presented. The PA employs 4 cascode …