ZnO nanoparticles embedded in a magnetic isocyanurate-based periodic mesoporous
organosilica (Fe3O4@ PMO–ICS–ZnO) were prepared through a modified environmentally …

In this study, preparation and characterization of a new magnetic propylsulfonic acid-
anchored isocyanurate bridging periodic mesoporous organosilica (Iron oxide@ PMO-ICS …

In this article, we give an overview about the chemical and physical processes that play a
role in etching at lower wafer temperatures. Conventionally, plasma etching processes rely …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

Cryogenic etching of a-Si, SiO 2, and Si 3 N 4 materials by CHF 3/Ar inductively coupled
plasma is investigated in a range of temperature from− 140 to+ 20 C. Samples of the three …

The surface conductivity influences the etched pattern profiles in the plasma process. In the
dielectric film etching, it is vital to reduce the charging build-up, which bends the trajectory of …

The dependence of substrate temperatures (50 to− 20° C) on etch rate in two kinds of
PECVD SiN films were investigated by a CF 4/H 2 mixture plasma. The XRR and XPS …

Manufacturing semiconductor devices requires advanced patterning technologies, including
reactive ion etching (RIE) based on the synergistic interactions between ions and etch gas …

SiO 2 atomic layer etching (ALE) techniques are widely used to improve the etch issues
related to nanoscale semiconductor device etching such as self-aligned contact (SAC) …

Atomic Layer Etching is performed on SiO 2 samples cooled down to a very low temperature
(below− 100 C). C 4 F 8 gas flow is injected and molecules physisorb on the cooled …