The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in
aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical …

GaN community has recently recognized that it is imperative that the extended, and point
defects in GaN and related materials, and the mechanisms for their formation are …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

The realization of high-performance optoelectronic devices, based on GaN and other nitride
semiconductors, requires the existence of a high-quality substrate. Non-polar or semipolar …

The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN
templates with the same LED structure. One on thin GaN template (∼ 2 μ m) with high …

Defects in GaN layers grown by hydride vapor-phase epitaxy have been investigated by
photoelectrochemical (PEC) etching, and by wet etching in hot H 3 PO 4 acid and molten …

Screw dislocations are generally considered to be one of the main causes of GaN-based
device leakage, but so far, nearly no reports have focused on the effects of open-core screw …

The mechanism of the UV photoenhanced wet etching of GaN is determined. The UV
photoenhanced wet etching does not require an electrical contact to be made to the sample …

Morphology and microstructure of dislocation etch pits in GaN epilayers etched by molten
KOH have been investigated by atomic force microscopy, scanning electron microscopy …

Etch pits could form on an exposed surface of a crystal when the crystal is exposed to an
etching environment or chemicals. Due to different dissolution rates along various crystalline …