Gate-stack engineering to improve the performance of 28 nm low-power high-k/metal-gate device
J Park, W Jang, C Shin - Micromachines, 2021 - mdpi.com
In this study, a gate-stack engineering technique is proposed as a means of improving the
performance of a 28 nm low-power (LP) high-k/metal-gate (HK/MG) device. In detail, it was …
performance of a 28 nm low-power (LP) high-k/metal-gate (HK/MG) device. In detail, it was …
Charge transient behaviour and spectroscopic ellipsometry characteristics of TiN/HfSiO MOS capacitors
A combination of two powerful techniques, namely, charge deep level transient
spectroscopy and spectroscopic ellipsometry is employed on atomic layer deposited Si …
spectroscopy and spectroscopic ellipsometry is employed on atomic layer deposited Si …
Enhancing the electrical characteristics of Ta2O5 based MOSCAP compared with conventional SiO2 based MOSCAP by varying temperature
G Srividya, D Sheela - AIP Conference Proceedings, 2024 - pubs.aip.org
This project aims to enhance the electrical characteristics of MOS capacitors by using novel
dielectric materials to improve the stack capacitance. Ta2O5 dielectric material is used …
dielectric materials to improve the stack capacitance. Ta2O5 dielectric material is used …
Electrical characterization of postmetal annealed ultrathin TiN gate electrodes in Si MOS capacitors
Focusing on sub‐10 nm Silicon CMOS device fabrication technology, we have incorporated
ultrathin TiN metal gate electrode in Hafnium Silicate (HfSiO) based metal‐oxide capacitors …
ultrathin TiN metal gate electrode in Hafnium Silicate (HfSiO) based metal‐oxide capacitors …
Investigation of Leakage Parameters of Hafnium Silicate (HfSiO4) Based Nano-Scale MOS Circuits
J Ahmad - 2020 - search.proquest.com
Abstract High-k based Metal Oxide Semiconductor (MOS) capacitors are readily used in next
generation nano scaled Complementary Metal Oxide Semiconductor (CMOS) circuits. These …
generation nano scaled Complementary Metal Oxide Semiconductor (CMOS) circuits. These …
Interação entre o exercício crônico eo background genético no metabolismo do fluoreto
IT Sabino - 2019 - teses.usp.br
O metabolismo do fluoreto (F) é influenciado por fatores genéticos e epigenéticos, como o
exercício físico. Vários estudos têm procurado desvendar a influência de fatores genéticos …
exercício físico. Vários estudos têm procurado desvendar a influência de fatores genéticos …