A review of GaN HEMT broadband power amplifiers

KH Hamza, D Nirmal - AEU-International Journal of Electronics and …, 2020 - Elsevier
The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …

Research on the newest GaN-Based solid-state power amplifier for CiADS project

Y He, K Jin, G Jiang, L Shi, L Sun, F Qiu, Z Wu… - Nuclear Instruments and …, 2023 - Elsevier
Abstract Institute of Modern Physics (IMP), Chinese Academy of Sciences is the first
domestic institute to widely apply solid-state power amplifier (SSPA) to linear accelerator …

A distributed power amplifier design with a high power gain

E Amiri, M Joodaki, M Forouzanfer… - 2020 28th Iranian …, 2020 - ieeexplore.ieee.org
In this paper we present a distributed power amplifier that has a good gain-bandwidth
product in comparison with other recent discrete distributed power amplifiers. A TGF2023-01 …

Broadband RF Power Amplifier with Combination of Large Signal X-Parameter and Real Frequency Techniques

R Krishnamoorthy, N Kumar… - IEICE Transactions …, 2020 - search.ieice.org
A new design approach of broadband RF power amplifier (PA) is introduced in this work with
combination of large signal X-parameter and Real-Frequency Technique (RFT). A …

İkinci ve Üçüncü Harmonik Ayarlamayla Cree Marka CG2H40025 Transistör Kullanarak Geniş Bant Mikrodalga Güç Yükselteci Tasarımı ve Simülasyonu

A Aktaş, N Akçam - Academic Perspective Procedia, 2021 - acperpro.com
İletişim sistemleri, radar sistemleri, mikrodalga fırın, bluetooth kulaklık ve daha birçok alan
olan RF teknolojileri için mikrodalga güç yükselteçleri gereklidir. Mikrodalga güç …

[PDF][PDF] Distributed power amplifiers

A Grebennikov, N Kumar - Radio Frequency and Microwave …, 2019 - researchgate.net
The potential of traveling-wave or distributed amplification for obtaining power gains over
very wide frequency bands has been recognized yet in the mid-1930s when it was found …