In the past decade, atomic layer deposition (ALD) has become an important thin film deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …
Advances in the fabrication of multicomponent oxide thin films are crucial to prepare specific compositions with precise structures and controlled interfaces. This will enable the …
The decreasing sizes in complementary metal oxide semiconductor (CMOS) transistor technology require the replacement of SiO2 with gate dielectrics that have a high dielectric …
Ln2O3 thin films with optically active f-electrons (Ln= Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) have been grown on Si (100) and soda lime glass substrates by atomic layer deposition …
Z Zheng - Handbook on the Physics and Chemistry of Rare …, 2010 - Elsevier
Polynuclear complexes of rare-earth elements characterized by their well-defined, cluster- like core structures are a class of interesting compounds with pleasing molecular structures …
P Salles, P Machado, P Yu, M Coll - Chemical Communications, 2023 - pubs.rsc.org
Oxides offer unique physical and chemical properties that inspire rapid advances in materials chemistry to design and nanoengineer materials compositions and implement …
Thin films of multiferroic gadolinium orthoferrite (GdFeO 3) are of significant interest due to intrinsic coupling of magnetic and ferroelectric order in their monolithic bimetallic structures …
MJ Saly, F Munnik, CH Winter - Journal of Materials Chemistry, 2010 - pubs.rsc.org
The atomic layer deposition of CaB2O4 was carried out using bis (tris (pyrazolyl) borate) calcium (CaTp2) and water as precursors. CaTp2 melts at 280° C, undergoes solid state …
Nanoparticles of a Nd-doped LaAlO3 perovskite can be obtained rapidly and with quantitative yield using the Bradley (ether elimination) treatment of a mixture of individual …