“Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with Npn configuration
T Kumabe, H Watanabe, Y Ando, A Tanaka… - Applied Physics …, 2022 - iopscience.iop.org
Abstract An AlGaN/GaN heterojunction bipolar transistor (HBT) with Npn configuration was
fabricated by the" regrowth-free" method, resulting in a contamination-free emitter-base …
fabricated by the" regrowth-free" method, resulting in a contamination-free emitter-base …
2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification
The heterojunction bipolar transistor (HBT) differs from the classical homojunction bipolar
junction transistor in that each emitter‐base‐collector layer is composed of a different …
junction transistor in that each emitter‐base‐collector layer is composed of a different …
Mapping etching induced damages on GaN surfaces using scanning internal photoemission microscopy
A Terano, H Imadate, K Shiojima - Materials Science in Semiconductor …, 2017 - Elsevier
In this study, we used scanning internal photoemission microscopy (SIPM) to investigate
damage on the n-GaN surface, which were induced by inductive coupled plasma (ICP) …
damage on the n-GaN surface, which were induced by inductive coupled plasma (ICP) …
[HTML][HTML] Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy
The impact of proton irradiation on the deep level states throughout the Mg-doped p-type
GaN bandgap is investigated using deep level transient and optical spectroscopies …
GaN bandgap is investigated using deep level transient and optical spectroscopies …
A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing
BW Su, BW Yao, XL Zhang, KX Huang, DK Li… - Nanoscale …, 2020 - pubs.rsc.org
Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals
heterostructures play an important role in the development of future nanoelectronics. Herein …
heterostructures play an important role in the development of future nanoelectronics. Herein …
Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates
This paper presents strain-effect transistors (SETs) based on flexible III-nitride high-electron-
mobility transistors (HEMTs) through theoretical calculations. We show that the electronic …
mobility transistors (HEMTs) through theoretical calculations. We show that the electronic …
GaN-based double-heterojunction bipolar transistors with a composition graded p-InGaN base
S Yan, Y Zhou, J Liu, Y Zhong, X Sun… - … on Electron Devices, 2023 - ieeexplore.ieee.org
The influence of energy band structure on the electrical characteristics of GaN-based double-
heterojunction bipolar transistors (DHBTs) has been studied through both simulation and …
heterojunction bipolar transistors (DHBTs) has been studied through both simulation and …
High-responsivity GaN/InGaN heterojunction phototransistors
We report high-responsivity GaN/InGaN heterojunction phototransistors (HPTs) grown on
sapphire substrates. Under the ultraviolet (UV) photon illumination from the front side of the …
sapphire substrates. Under the ultraviolet (UV) photon illumination from the front side of the …
Working toward high-power GaN/InGaN heterojunction bipolar transistors
Abstract III-nitride (III-N) heterojunction bipolar transistors (HBTs) are a less-explored
electronic device technology due to the myriad research issues in material growth, device …
electronic device technology due to the myriad research issues in material growth, device …
GaN/InGaN avalanche phototransistors
We report on III–nitride (III–N) avalanche phototransistor (APT) action by illuminating
ultraviolet (UV) photons onto a GaN/InGaN npn heterojunction bipolar transistor in an open …
ultraviolet (UV) photons onto a GaN/InGaN npn heterojunction bipolar transistor in an open …