GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-
induced by means of Ni seeds. Under identical growth conditions of temperature and V/III …

The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed.
These properties include the absence of residual strain, exclusion of most extended defects …

Semiconductor nanowires (NWs) are characterized by an extraordinarily large surface-to-
volume ratio. Consequently, surface effects are expected to play a much larger role than in …

We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline
GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we …

On Si (1 1 1) and Si (0 0 1), GaN nanowires (NWs) form in a self-induced way without the
need for any external material. On sapphire, NW growth is induced by Ni collectors. Both …

We investigate the low-temperature photoluminescence of GaN nanowires grown catalyst
free on Si (111). For single nanowires dispersed on Si (111), we observe excitonic …

Vertical GaN nanowires are grown in a self-induced way on a sputtered Ti film by plasma-
assisted molecular beam epitaxy. Both in situ electron diffraction and ex situ ellipsometry …

The optical and structural properties of wurtzite GaN nanowires containing zinc-blende GaN
inclusions of different thicknesses are investigated. Micro-photoluminescence spectra of …

We observe a significant increase in the photoluminescence intensity of GaN nanowires
under continuous ultraviolet irradiation on a time scale of minutes. Experiments carried out …

We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires
are grown by molecular beam epitaxy on a Si (111) substrate in a self-organized manner …