Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon
W Griebel, M Rudolph, UL Rohde - IETE Journal of Research, 2023 - Taylor & Francis
When increasing the RF power level in transistor oscillators to achieve better phase noise
performance a reverse voltage breakdown of the base emitter junction of the oscillator …
performance a reverse voltage breakdown of the base emitter junction of the oscillator …