Fabrication of GaN nano-towers based self-powered UV photodetector
The fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient
ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN …
ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN …
GaN nanotowers grown on Si (111) and functionalized with Au nanoparticles and ZnO nanorods for highly responsive UV photodetectors
Vertically aligned GaN nanotowers (NTs) were grown on the Si (111) substrate by plasma-
assisted molecular beam epitaxy to design a highly responsive ultraviolet (UV) …
assisted molecular beam epitaxy to design a highly responsive ultraviolet (UV) …
Au-nanoplasmonics-mediated surface plasmon-enhanced GaN nanostructured UV photodetectors
The nanoplasmonic impact of chemically synthesized Au nanoparticles (Au NPs) on the
performance of GaN nanostructure-based ultraviolet (UV) photodetectors is analyzed. The …
performance of GaN nanostructure-based ultraviolet (UV) photodetectors is analyzed. The …
Enhanced photoresponse performance in GaN based symmetric type MSM ultraviolet-A and MIS ultraviolet-A to C photodetectors
To realize an improved sustainable future, additional developments in the energy
consumption is a prerequisite important aspect for the operation of any electronic device …
consumption is a prerequisite important aspect for the operation of any electronic device …
Ultra-thin GaN nanostructures based self-powered ultraviolet photodetector via non-homogeneous Au-GaN interfaces
We report the fabrication of ultra-thin GaN (0002) nanostructures based self-powered
ultraviolet photodetector on Si (111) substrate. Non-homogeneous GaN nano-islands were …
ultraviolet photodetector on Si (111) substrate. Non-homogeneous GaN nano-islands were …
Enhanced self-driven ultraviolet photodetection performance of high-k Ta2O5/GaN heterostructure
NKR Nallabala, SS Kushvaha, S Sangaraju… - Materials Science in …, 2024 - Elsevier
Recently, high-k dielectric oxide-based MIS type ultraviolet (UV) photodetectors (PDs) have
engrossed the researchers in the area of optoelectronics owing to their superior properties …
engrossed the researchers in the area of optoelectronics owing to their superior properties …
High-performance self-powered UV-Vis-NIR photodetectors based on horizontally aligned GaN microwire array/Si heterojunctions
Considering their reduced size and weight, low cost and portability, self-powered
photodetectors that can be functioned independently of an external power supply are …
photodetectors that can be functioned independently of an external power supply are …
Self-powered ultraviolet MSM photodetectors with high responsivity enabled by a lateral n+/n− homojunction from opposite polarity domains
We report a GaN-based self-powered metal–semiconductor–metal (MSM)-type ultraviolet
(UV) photodetector (PD) by employing a “lateral polarity structure (LPS)” grown on the …
(UV) photodetector (PD) by employing a “lateral polarity structure (LPS)” grown on the …
Synthesis of silicon nanowire and crystalline carbon quantum dots heterostructure and study of photo response and photoluminescence property
Silicon nanowire based heterostrucure or nanocomposites becomes intrigued in next
generation energy conversion devices. Herein, we have prepared n type silicon nanowires …
generation energy conversion devices. Herein, we have prepared n type silicon nanowires …
Epitaxial growth of GaN nanostructure by PA-MBE for UV detection application
We report the growth of lower aspect ratio, nano-island shaped, lower stress and strain
facilitated gallium nitride nanostructures (GaN-NS) on Si (111) substrate via plasma assisted …
facilitated gallium nitride nanostructures (GaN-NS) on Si (111) substrate via plasma assisted …