A nitride-based semiconductor light-emitting diode capable of suppressing complication of a
manufacturing process while improving light extraction efficiency from a light-emitting layer …

(57) ABSTRACT A nitride semiconductor light-emitting chip offers enhanced luminous
efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip …

(57) ABSTRACT A nitride semiconductor chip is provided that offers enhanced luminous
efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip …

A method of fabricating a nitride-based semiconductor light emitting device capable of
Suppressing reduction of charac teristics and a yield is obtained. This method of fabricating …

(57) ABSTRACT A nitride semiconductor chip is provided that offers enhanced luminous
efficacy and an increased yield as a result of an improved EL emission pattern and improved …

US8557681B2 - III-nitride wafer fabrication - Google Patents US8557681B2 - III-nitride
wafer fabrication - Google Patents III-nitride wafer fabrication Download PDF Info …

H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED
EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING …

(57) ABSTRACT A device includes a textured Substrate having a trench extend ing from a
top surface of the textured substrate into the tex tured substrate, wherein the trench …

An optoelectronic component and a method for producing an optoelectronic component are
disclosed. In an embodi ment the optoelectronic component includes a layer struc ture …

US8815715B2 - III-nitride wafer fabrication - Google Patents US8815715B2 - III-nitride wafer
fabrication - Google Patents III-nitride wafer fabrication Download PDF Info Publication number …