Field-Effect Transistor Based on 2D Microcrystalline MoS2 Film Grown by Sulfurization of Atomically Layer Deposited MoO3
IV Zabrosaev, MG Kozodaev, RI Romanov… - Nanomaterials, 2022 - mdpi.com
Atomically thin molybdenum disulfide (MoS2) is a promising channel material for next-
generation thin-body field-effect transistors (FETs), which makes the development of …
generation thin-body field-effect transistors (FETs), which makes the development of …
Modulation of microstructural and electrical properties of rapid thermally synthesized MoS2 thin films by the flow of H2 gas
Two dimensional transition metal dichalcogenides (TMDC) have gained potential attention
of the researchers, owing to their fascinating electronic and optoelectronic properties …
of the researchers, owing to their fascinating electronic and optoelectronic properties …
Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing
J Shimizu, T Ohashi, K Matsuura… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
Low-carrier density and high-crystallinity molybdenum disulfide (MoS 2) films were
fabricated by low-temperature and clean process based on a UHV RF sputtering system …
fabricated by low-temperature and clean process based on a UHV RF sputtering system …
Sputter-Deposited-MoS2 MISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration
K Matsuura, JI Shimizu, M Toyama… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
We have fabricated large area integrated top-gate MISFETs with sputter-deposited-MoS 2
film having n-type operation. A sputtering method enables us to form a large-area MoS 2 thin …
film having n-type operation. A sputtering method enables us to form a large-area MoS 2 thin …
Resistivity reduction of low-carrier-density sputtered-MoS2 film using fluorine gas
Y Okada, S Yamaguchi, T Ohashi… - 2017 17th …, 2017 - ieeexplore.ieee.org
High-performance and low-power LSIs have been achieved by 3D transistor such as FinFET
in logic and DRAM using crystalline-silicon channel and 3D-stacked devices in NAND flash …
in logic and DRAM using crystalline-silicon channel and 3D-stacked devices in NAND flash …
Chip-Level-Integrated MISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate
K Matsuura, J Shimizu, M Toyama… - 2018 IEEE 2nd …, 2018 - ieeexplore.ieee.org
We have fabricated a chip-level-integrated top-gate n MISFET with sputter-deposited-MoS 2
film and confirmed n-type operation. A sputtering method enabled us to form a large-scale …
film and confirmed n-type operation. A sputtering method enabled us to form a large-scale …
[PDF][PDF] Field-Effect Transistor Based on 2D Microcrystalline MoS2 Film Grown by Sulfurization of Atomically Layer Deposited MoO3. Nanomaterials 2022, 12, 3262
IV Zabrosaev, MG Kozodaev, RI Romanov… - 2022 - academia.edu
Atomically thin molybdenum disulfide (MoS2) is a promising channel material for
nextgeneration thin-body field-effect transistors (FETs), which makes the development of …
nextgeneration thin-body field-effect transistors (FETs), which makes the development of …
Low-Dimensional-Structure Devices for Future ElectronicsBehaviors
S Oda, T Kawanago… - 2018 International …, 2018 - ieeexplore.ieee.org
Recent progress of nanotechnology has made possible observations of unique
characteristic of nano-structure which are not possible in bulk semiconductors. In this talk …
characteristic of nano-structure which are not possible in bulk semiconductors. In this talk …
[引用][C] Vertically-stacked nanowire/FinFETs and following 2D FETs for logic chips
H Wakabayashi - 2018 IEEE SOI-3D-Subthreshold …, 2018 - ieeexplore.ieee.org
Vertically-Stacked Nanowire/FinFETs and Following 2D FETs for Logic Chips Page 1
Vertically-Stacked Nanowire/FinFETs and Following 2D FETs for Logic Chips Hitoshi …
Vertically-Stacked Nanowire/FinFETs and Following 2D FETs for Logic Chips Hitoshi …