Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT
Growth of wide bandgap material over narrow bandgap material, results into a two
dimensional electron gas (2DEG) at the heterointerface due to the conduction band …
dimensional electron gas (2DEG) at the heterointerface due to the conduction band …
Reliable hybrid small-signal modeling of GaN HEMTs based on particle-swarm-optimization
AS Hussein, AH Jarndal - IEEE Transactions on Computer …, 2017 - ieeexplore.ieee.org
This paper presents an efficient parameter extraction method applied to GaN high electron
mobility transistors. The procedure only relies on S-parameter measurements at cold bias …
mobility transistors. The procedure only relies on S-parameter measurements at cold bias …
Small signal equivalent circuit modeling for AlGaN/GaN HFET: Hybrid extraction method for determining circuit elements of AlGaN/GaN HFET
The developments in AlGaN/GaN heterojunction field effect transistors (HFETs) are
beginning to allow harnessing of the great potential of this technology in high-power radio …
beginning to allow harnessing of the great potential of this technology in high-power radio …
The large world of FET small‐signal equivalent circuits
The small‐signal equivalent circuit modeling of microwave field‐effect transistors (FETs) is
an evergreen and ever flourishing research field that has to be up‐to‐date with …
an evergreen and ever flourishing research field that has to be up‐to‐date with …
Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications
MA Alim, AA Rezazadeh, C Gaquiere - Solid-state electronics, 2016 - Elsevier
Thermal and small-signal model parameters analysis have been carried out on 0.5 μm×(2×
100 μm) AlGaAs/GaAs HEMT grown on semi-insulating GaAs substrate and 0.25 μm×(2× …
100 μm) AlGaAs/GaAs HEMT grown on semi-insulating GaAs substrate and 0.25 μm×(2× …
Non-quasi-static intrinsic GaN-HEMT model
BJ Touchaei, M Shalchian - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
This article presents a small-signal model of intrinsic gallium nitride high electron mobility
transistor (GaN HEMT) for non-quasi-static analysis. The model is derived from the charge …
transistor (GaN HEMT) for non-quasi-static analysis. The model is derived from the charge …
Accurate nonlinear GaN HEMT simulations from X-to Ka-band using a single ASM-HEMT model
This paper presents for the first time an investigation of the ASM-HEMT model large-signal
accuracy across a wide range of operating frequencies. Comparisons between measured …
accuracy across a wide range of operating frequencies. Comparisons between measured …
A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications
This article presents a set of measured benchmarks for the noise and gain performance of
six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility …
six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility …
Hybrid small-signal modeling of GaN HEMTs based on improved genetic algorithm
J Zhang, X Hou, M Liu, S Yang, B Liu, J Wang… - Microelectronics …, 2022 - Elsevier
In this paper, an improved genetic algorithm-based hybrid direct-optimal extraction method
for small-signal model of GaN HEMT devices is proposed. Simulated annealing algorithm …
for small-signal model of GaN HEMT devices is proposed. Simulated annealing algorithm …
Enabling the development of accurate intrinsic parameter extraction model for GaN HEMT using support vector regression (SVR)
This study employs support vector regression (SVR) to develop an accurate and reliable
intrinsic parameter extraction model for gallium nitride (GaN) high electron mobility …
intrinsic parameter extraction model for gallium nitride (GaN) high electron mobility …