The structural and optical properties of InGaN/GaN nanowire heterostructures grown by
plasma-assisted molecular beam epitaxy have been studied using a combination of …

Monolithic integration of high-performance semiconductor lasers on silicon enables wafer-
scale optical interconnects within photonic integrated circuits on a silicon manufacturing …

We have calculated the electronic structure of InAs quantum dots embedded in InP as a
function of size, using strain dependent eight-band k⋅ p theory in the envelope function …

In recent years, a considerable amount of work has been devoted to understanding and
controlling the formation of self-assembled nanostructures by the Stranski–Krastanov growth …

We show how the height dispersion of self-organized InAs/InP (001) quantum islands
emitting at 1.55 μm was reduced by optimizing the epitaxial growth parameters. Low height …

We report on an effective way to continuously tune the emission wavelength of InAs
quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is …

The surface morphology changes associated with the formation of InAs/InP (311) B quantum
dots grown according to a proposed growth procedure (double cap) have been investigated …

InAs quantum dots (QDs) on InP were implemented as active layers in laser structures
completely grown by metal organic vapor phase epitaxy (MOVPE). In laser structures due to …

How the possibility of a better strain relaxation introduced by the surface roughness can
modify alloy demixing is investigated here. We propose a step-by-step model to simulate the …

We report on the growth of InAs quantum dots (QDs) on GaInAsP and InP buffers by metal–
organic chemical vapour deposition on InP (100) substrates. Indium segregation and the As …