The family of two-dimensional (2D) materials composed of atomically thin layers connected
via van der Waals interactions has attracted much curiosity due to a variety of intriguing …

This paper presents an overview of the rapid progress being made in the development of
InP based devices for high speed applications. Over the past few decades, major aero …

We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on 2-D layer-
structured molybdenum disulfide (MoS 2) crystals and MoS 2 dual-gate n-channel MOSFETs …

DOI: 10.1002/adma. 201601407 to control the pressure inside the suckers and thus the
pressure difference between the inside and outside of the suckers, resulting in the …

Recently, III–V materials have been extensively studied as potential candidates for post-Si
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …

We investigate the integration of Al 2 O 3 high-k dielectric on two-dimensional (2D) crystals
of boron nitride (BN) and molybdenum disulfide (MoS 2) by atomic layer deposition (ALD) …

Few-layer black phosphorus (BP) has attracted much attention due to its high mobility and
suitable band gap for potential applic5ations in optoelectronics and flexible devices …

This year marks a major materials milestone in the makeup of silicon-based field-effect
transistors: in the microprocessors produced by leading manufacturers, the SiO2 gate …

The paper describes the reasons for the greater difficulty in the passivation of interface
defects of III–V semiconductors like GaAs. These include the more complex reconstructions …

Lacking a suitable gate insulator, practical GaAs metal-oxide-semiconductor field-effect
transistors (MOSFETs) have remained all but a dream for more than four decades. The …