[HTML][HTML] Characterizing heavy ions-irradiated Zr/Nb: Structure and mechanical properties

N Daghbouj, HS Sen, J Čížek, J Lorinčík, M Karlík… - Materials & Design, 2022 - Elsevier
In this work, the radiation responses of Zr/Nb nanostructured metallic multilayers (NMMs) are
studied. The nanostructures with different layer thicknesses were deposited on Si (1 1 1) …

Revealing nanoscale strain mechanisms in ion-irradiated multilayers

N Daghbouj, HS Sen, M Callisti, M Vronka, M Karlik… - Acta Materialia, 2022 - Elsevier
Tailoring interfaces is a powerful way of reducing the accumulation of radiation defects.
Understanding strain evolution induced by ion bombardment in nuclear materials with high …

Microstructural evolution of helium-irradiated 6H–SiC subjected to different irradiation conditions and annealing temperatures: A multiple characterization study

N Daghbouj, BS Li, M Callisti, HS Sen, M Karlik… - Acta Materialia, 2019 - Elsevier
The microstructural phenomena occurring in 6H–SiC subjected to different irradiation
conditions and annealing temperatures were investigated to assess the suitability of 6H–SiC …

Exploring defect behavior in helium-irradiated single-crystal and nanocrystalline 3C-SiC at 800° C: A synergy of experimental and simulation techniques

Z Wang, L Zhang, AT AlMotasem, B Li, T Polcar… - Acta Materialia, 2024 - Elsevier
In this study, single crystal (sc) and nanocrystalline (nc) 3C-SiC samples were subjected to
30 keV He ion irradiation across various doses while maintaining a temperature of 800° C …

The structural evolution of light-ion implanted 6H-SiC single crystal: Comparison of the effect of helium and hydrogen

N Daghbouj, BS Li, M Callisti, HS Sen, J Lin, X Ou… - Acta Materialia, 2020 - Elsevier
The microstructure evolution of hydrogen-implanted 6H-SiC at different temperatures and
fluences is investigated by using various experimental techniques. In H-implanted samples …

Wafer-scale 4H-silicon carbide-on-insulator (4H–SiCOI) platform for nonlinear integrated optical devices

A Yi, Y Zheng, H Huang, J Lin, Y Yan, T You, K Huang… - Optical Materials, 2020 - Elsevier
Abstract 4H-silicon carbide-on-insulator (4H–SiCOI) serves as a novel and high efficient
integration platform for nonlinear optics and quantum photonics. The realization of wafer …

Microstructure evolution of iron precipitates in (Fe, He)-irradiated 6H-SiC: A combined TEM and multiscale modeling

N Daghbouj, AT AlMotasem, J Vesely, BS Li… - Journal of Nuclear …, 2023 - Elsevier
Microstructure of radiation-induced Iron phases were investigated in a 6H-SiC subjected to
Iron and Helium bombardment with a damage level of 8 dpa. The microstructural evolution …

Thermal behavior of iron in 6H-SiC: influence of He-induced defects

BS Li, HS Sen, N Daghbouj, AT AlMotasem, J Lorinčík… - Scripta Materialia, 2022 - Elsevier
SiC is considered a perspective material in advanced nuclear systems as well as for
electronic or spintronic applications, which require an ion implantation process. In this …

Interface-driven strain in heavy ion-irradiated Zr/Nb nanoscale metallic multilayers: validation of distortion modeling via local strain mapping

HS Sen, N Daghbouj, M Callisti, M Vronka… - … Applied Materials & …, 2022 - ACS Publications
Nanolayered metallic alloys are promising materials for nuclear applications thanks to their
resistance to radiation damage. Here, we investigate the effect of ion (C, Si, and Cu) …

Interphase boundary layer-dominated strain mechanisms in Cu+ implanted Zr-Nb nanoscale multilayers

N Daghbouj, M Callisti, HS Sen, M Karlik, J Čech… - Acta Materialia, 2021 - Elsevier
Abstract Sputter-deposited Zr/Nb nanoscale metallic multilayers with a periodicity of 27 (thin)
and 96 nm (thick) were subjected to Cu+ implantation with low and high fluences and then …