Noise and Defects in Microelectronic Materials and Devices
DM Fleetwood - IEEE Transactions on Nuclear Science, 2015 - ieeexplore.ieee.org
This paper reviews and compares predictions of the Dutta-Horn model of low-frequency
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …
Junctionless versus inversion-mode lateral semiconductor nanowire transistors
This paper reports on gate-all-around silicon nanowire field-effect transistors (FETs) built in
a lateral configuration, which represent the ultimate scaling limit of triple-gate finFET devices …
a lateral configuration, which represent the ultimate scaling limit of triple-gate finFET devices …
Effects of high-pressure annealing on the low-frequency noise characteristics in ferroelectric FET
In this work, the low-frequency noise (LFN) characteristics of hafnium-zirconium oxide (HZO)
ferroelectric field-effect transistors (FeFETs) with and without high-pressure forming gas …
ferroelectric field-effect transistors (FeFETs) with and without high-pressure forming gas …
Low-frequency noise analysis and modeling in vertical tunnel FETs with Ge source
This paper presents the low-frequency noise (LFN) behavior of vertical tunnel FETs (TFETs).
The experimental input characteristics with different source compositions (Si and Ge) and …
The experimental input characteristics with different source compositions (Si and Ge) and …
Heterogeneous integration of III–V materials by direct wafer bonding for high-performance electronics and optoelectronics
III-V materials, such as InGaAs and InP, are highly attractive for high-performance
electronics and optoelectronics owning to their high carrier mobilities and potential for …
electronics and optoelectronics owning to their high carrier mobilities and potential for …
Low-frequency noise investigation of GaN/AlGaN metal–oxide–semiconductor high-electron-mobility field-effect transistor with different gate length and orientation
K Takakura, V Putcha, E Simoen… - … on Electron Devices, 2020 - ieeexplore.ieee.org
In this article, GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect
transistors (MOSHEMTs) fabricated on high-resistivity Si (111) substrates have been …
transistors (MOSHEMTs) fabricated on high-resistivity Si (111) substrates have been …
Variability analysis of ferroelectric FETs in program operation using low-frequency noise spectroscopy
We investigate the variability of a ferroelectric FET (FEFET) in program operation using low-
frequency noise (LFN) spectroscopy. Contrary to the previous report, LFN characteristics of …
frequency noise (LFN) spectroscopy. Contrary to the previous report, LFN characteristics of …
Low-frequency noise assessment of vertically stacked Si n-channel nanosheet FETs with different metal gates
A Oliveira, A Veloso, C Claeys… - … on Electron Devices, 2020 - ieeexplore.ieee.org
This article presents a comparative low-frequency noise (LFN) characterization of gate-all-
around nanosheet n-channel Si metal-oxide-semiconductor field effect transistors …
around nanosheet n-channel Si metal-oxide-semiconductor field effect transistors …
Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) Gate Structure During Endurance Fatigue
J Duan, S Zhao, F Tian, J Xiang, K Han… - … on Electron Devices, 2022 - ieeexplore.ieee.org
This work investigates trap generation in gate stacks of ferroelectric field-effect transistor
(FeFET) with TiN/Hf0. 5Zr0. 5O2/SiOx/Si gate structure during endurance fatigue by using …
(FeFET) with TiN/Hf0. 5Zr0. 5O2/SiOx/Si gate structure during endurance fatigue by using …
The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks
Dispersion in accumulation is a widely observed phenomenon in technologically important
InGaAs gate stacks. Two principal different interface defects were proposed as the physical …
InGaAs gate stacks. Two principal different interface defects were proposed as the physical …