Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …

We review the technology of Ge 1− x Sn x-related group-IV semiconductor materials for
developing Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …

We synthesized up to Ge 0.914 Sn 0.086 alloys on (100) GaAs/In y Ga 1− y As buffer layers
using molecular beam epitaxy. The buffer layers enable engineered control of strain in the …

In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to
grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully …

We have investigated the behaviors of the carrier mobility and concentration of the undoped
Ge 1-x Sn x layers epitaxially grown on silicon-on-insulator (SOI) substrates. Hall …

We have investigated the dependence of Sn precipitation and crystallinity of Ge1− xSnx
layers on the growth temperature. We also demonstrated a growth of a tensile–strained Ge …

Inclusion of Si atoms to the growth surface during the molecular beam epitaxy of Ge and Sn
to form a SiGeSn alloy was identified as a reactive surface species and as a means to …

Ge 1− x Sn x materials with constant and step-graded compositions have been successfully
grown on Ge/Si (0 0 1) substrates by using low temperature molecular beam epitaxy (LT …

This paper describes preparation of a new class of Ge1–x–y Si x Sn y direct-gap
semiconductors grown on Ge-buffered Si substrates via depositions of trigermane (Ge3H8) …

Measurement—the act of measuring physical properties that we perform—has the potential
to contribute to the successful advancement of sciences and society. To open doors in …