Recent development in integrated Lithium niobate photonics

Z Xie, F Bo, J Lin, H Hu, X Cai, XH Tian… - … in Physics: X, 2024 - Taylor & Francis
The lithium niobate on insulator devices confine the light field to submicron size in
monocrystalline lithium niobate, to achieve ultra-strong electro-optical interaction and …

[HTML][HTML] Recent Progresses on Hybrid Lithium Niobate External Cavity Semiconductor Lasers

M Wang, Z Fang, H Zhang, J Lin, J Zhou, T Huang… - Materials, 2024 - mdpi.com
Thin film lithium niobate (TFLN) has become a promising material platform for large scale
photonic integrated circuits (PICs). As an indispensable component in PICs, on-chip …

Strip loaded waveguide amplifiers based on erbium-doped nanocomposites with 17 dB internal net gain

S Tao, H Song, D Zhao, Y Yang, S Wang, J Yan… - Optics …, 2024 - opg.optica.org
We propose a strip loaded amplifier employing SU-8 as the loaded waveguide and
nanoparticles (NPs)-polymethyl methacrylate (PMMA) as the cladding layer. By leveraging …

Erbium-ytterbium co-doped lithium niobate single-mode microdisk laser with an ultralow threshold of 1 µW

M Li, R Gao, C Li, J Guan, H Zhang, J Lin… - Chinese Optics …, 2024 - opg.optica.org
We demonstrate single-mode microdisk lasers in the telecom band with ultralow thresholds
on erbium-ytterbium co-doped thin-film lithium niobate (TFLN). The active microdisk was …

An Erbium‐Doped Waveguide Amplifier on Thin Film Lithium Niobate with an Output Power Exceeding 100 mW

R Bao, Z Fang, J Liu, Z Liu, J Chen… - Laser & Photonics …, 2024 - Wiley Online Library
A high‐power thin film lithium niobate (TFLN) erbium‐doped waveguide amplifier (EDWA) is
demonstrated with a maximum on‐chip output power of 113 mW and a gain of 16 dB. The on …

Demonstration of Optical Gain at 1535 nm Based on ErIII Complex‐Doped Polymer Waveguides Under Light‐Emitting Diode Excitation

Y He, Y Man, X Shi, H Xu, Z Lin, B Zhang… - Advanced Optical …, 2024 - Wiley Online Library
A near‐infrared luminescent complex Er (DBTTA) 3 (DBFDPO)[where DBTTA=
dibenzotetrathienoacene; DBFDPO= 4, 6‐bis (diphenylphosphoryl) dibenzofuran] is …

On-chip integrated few-mode erbium–ytterbium co-doped waveguide amplifiers

X He, D Ma, C Zhou, M Xiao, W Chen, Z Zhou - Photonics Research, 2024 - opg.optica.org
We propose for the first time, to the best of our knowledge, an on-chip integrated few-mode
erbium–ytterbium co-doped waveguide amplifier based on an 800 nm thick Si_3N_4 …

1.76 μm on-chip gain characteristics of Tm3+ in a rib waveguide based on Tm3+-doped LiNbO3 thin-film on insulator

FS Meng, YJ Yang, F Chen, JM Liu, DL Zhang - Journal of Luminescence, 2024 - Elsevier
A theoretical study has been performed on 1.76 μm on-chip amplification characteristics of
Tm 3+ in a rib waveguide of LiNbO 3 on insulator (Tm: LNOI) under 795 nm wavelength …

TFLN-based nondegenerate optical parametric amplifier with high gain, high saturated optical power and linear wavelength tunability

L Shi, J Tang, RZ Li, ZX Chen, XW Gu, G Qian… - Optics & Laser …, 2025 - Elsevier
Optical parametric amplifier (OPA) utilizing thin-film lithium niobate (TFLN) is a cornerstone
in integrated microwave optics and high-speed optical communication due to its outstanding …

High on-chip gain spiral Al2O3:Er3+ waveguide amplifiers

DB Bonneville, CE Osornio-Martinez, M Dijkstra… - Optics express, 2024 - opg.optica.org
We demonstrate reactively sputtered Al_2O_3: Er^ 3+ waveguide amplifiers with an erbium
concentration of 3.9× 10^ 20 ions/cm^ 3, capable of achieving over 30 dB small signal net …