At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

Despite the apparent simplicity of pulsed laser deposition, consistent deposition of thin films
with the desired thickness, composition, crystallinity, and quality still remains challenging …

We demonstrate a link between the growth process, the stoichiometry of LaAlO 3, and the
interfacial electrical properties of LaAlO 3/SrTiO 3 heterointerfaces. Varying the relative La …

Complex oxides show extreme sensitivity to structural distortions and defects, and the
intricate balance of competing interactions which emerge at atomically defined interfaces …

Si‐doped β‐Ga2O3 thin films were grown at temperatures between 400 and 650° C and
oxygen partial pressures ranging from 3× 10− 4 mbar to 2.4× 10− 2 mbar prepared by …

Using low-temperature electrical measurements, the interrelation between electron
transport, magnetic properties, and ionic defect structure in complex oxide interface systems …

The oxidation of species in the plasma plume during pulsed laser deposition controls both
the stoichiometry as well as the growth kinetics of the deposited SrTiO3 thin films, instead of …

Exsolution phenomena are highly debated as efficient synthesis routes for nanostructured
composite electrode materials for the application in solid oxide cells (SOCs) and the …

We present data for epitaxial thin films of the prototypical entropy-stabilized oxide (ESO), Mg
0.2 Ni 0.2 Co 0.2 Cu 0.2 Zn 0.2 O, that reveals a systematic trend in lattice parameter and …

We explore the effect of growth conditions on the cation and anion chemistry, electrical
leakage, conduction mechanisms, and ferroelectric and dielectric behavior of BiFeO3 …