Due to its significant applications in many relevant fields, light detection in the solar‐blind
deep‐ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and …

Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state
lighting and high-resolution displays. As one of the widely used substrates, sapphire shows …

Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in
industrial, environmental and even biological fields. Compared to UV-enhanced Si …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

Light-emitting diodes with emission wavelengths less than 400 nm have been developed
using the AlInGaN material system. For devices operating at shorter wavelengths, alloy …

This paper furnishes a Comprehensive study about an emerging GaN HEMT technology
suitable for RF and high power applications. It plays a vital role in Wireless communication …

In the last decade, we have seen very rapid and significant developments in Raman
scattering experiments on GaN and related nitride compounds: the Γ-point phonon …

This report deals with the mechanism behind the unusual behavior of nanostructures in
mechanical strength, thermal stability, acoustics (lattice dynamics), photonics, electronics …