Defects play an essential role in controlling the phenomenon of d0 ferromagnetism in
nonmagnetic oxides. Defects can have significant impact on behavior, especially d0 …

We investigated the effects of both intrinsic defects and hydrogen atom impurities on the
magnetic properties of MgO samples. MgO in its pure defect-free state is known to be a …

This paper reports on the ferromagnetism of MgO powder and degraded powder at room
temperature. The starting material, Mg (OH) 2, was analyzed by X-ray fluorescence (XRF) …

Abstract CoFeB/Si-Zn-Sn-O/CoFeB magnetic tunnel junctions (MTJs) have been fabricated
using amorphous Si-Zn-Sn-O as a low-resistive semiconducting barrier. In the low bias …

The effect of variation in the thickness of ion assisted ion beam sputtered MgO spacer layer
deposited at oxygen ion assisted energy of 50 eV on the extent of magnetic coupling of NiFe …

Electron conduction mechanisms in CoFeB (0.8–10 nm)/MgO (3 nm)/CoFeB (4.2 nm)
magnetic tunnel junctions (MTJs) have been investigated in detail. A clear crossover from …

Magnetoresistive random access memories (MRAMs) are a relatively new class of
nonvolatile memories exploiting the hysteretic properties of ferromagnetic (FM) materials for …

The effect of annealing on the changes in the inelastic tunneling contributions in tunneling
conductance of ion beam sputtered CoFe/MgO/NiFe magnetic tunnel junctions (MTJs) is …

Magnetic tunnel junctions (MTJs) comprising Ta (5)/NiFe (5)/IrMn (15)/CoFeB (5)/Mg
(1)/MgO (3.5)/CoFeB (5)/Ta (5)/Ag (20)(thickness in nm) with (110) oriented CoFeB layers …

Мета роботи полягала у дослідженні електрофізичних властивостей (питомий опір та
термічний коефіцієнт опору) нанорозмірних плівкових структур на основі …