Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

We review recent progress in the growth and characterization of Si 1− x Ge x islands and Ge
dots on (001) Si. We discuss the evolution of the island morphology with Si 1− x Ge x …

A detailed Raman characterization of the structural properties of as-grown and annealed self-
assembled Si/Ge dot multilayers is reported in this paper. Several new modes in as-grown …

Scanning probe microscopy combined with selective wet chemical etching is employed to
quantitatively determine the full three-dimensional (3D) composition profiles of single …

The commonly accepted Stranski-Krastanow model, according to which island formation
occurs on top of a wetting layer (WL) of a certain thickness, predicts for the morphological …

We have used Raman spectroscopy, transmission electron microscopy, x-ray diffraction, and
x-ray photoemission spectroscopy to investigate strain relaxation mechanism of Si 0.22 Ge …

Unimodal SiGe islands with dominant {111} facets were grown coherently on pit-patterned
Si (001) substrates by molecular beam epitaxy. With increasing Ge deposition, the {111} …

Quantitative, nanometer-scale spatial resolution electron energy-loss spectroscopy EELS
was used to map the composition of coherent islands grown by molecular-beam epitaxy of …

Semiconductor heteroepitaxy involves a wealth of qualitatively different, competing
phenomena. Examples include three-dimensional island formation, injection of dislocations …

The self-patterning of the strain field that arises in the growth of stacked multilayers of
heteroepitaxial islands, together with the capability of tuning the island size by acting on the …