Ionizing radiation damage effects on GaN devices
Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high
power and high frequency applications, with higher breakdown voltages and two …
power and high frequency applications, with higher breakdown voltages and two …
Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: a comprehensive review
The remote sensing and satellite community working for space organizations have
expressed interest in building advanced devices with potential choices for Gallium Nitride …
expressed interest in building advanced devices with potential choices for Gallium Nitride …
Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors
Threshold-voltage shifts and increases in 1/f noise are observed in proton-irradiated
AlGaN/GaN high-electron-mobility transistors, indicating defect-mediated device …
AlGaN/GaN high-electron-mobility transistors, indicating defect-mediated device …
Effects of proton-induced displacement damage on gallium nitride HEMTs in RF power amplifier applications
NE Ives, J Chen, AF Witulski… - … on Nuclear Science, 2015 - ieeexplore.ieee.org
The effects of proton-induced displacement damage in GaN HEMTs on circuit-level RF
power amplifier parameters such as circuit gain, stability, and RF output power are …
power amplifier parameters such as circuit gain, stability, and RF output power are …
Single-event damages caused by heavy ions observed in AlGaN/GaN HEMTs
S Kuboyama, A Maru, H Shindou… - … on Nuclear Science, 2011 - ieeexplore.ieee.org
It was demonstrated that several kinds of permanent damage were introduced by heavy ions
in AlGaN/GaN HEMTs similar to SiC devices. A new mode of damage attributable to the …
in AlGaN/GaN HEMTs similar to SiC devices. A new mode of damage attributable to the …
Determination of single-event effect application requirements for enhancement mode gallium nitride HEMTs for use in power distribution circuits
L Scheick - IEEE Transactions on nuclear science, 2014 - ieeexplore.ieee.org
Characterization of destructive single-event effects in enhancement mode gallium nitride
high electron mobility transistors is presented as related to the optimal application of and …
high electron mobility transistors is presented as related to the optimal application of and …
Enhanced charge collection by single ion strike in AlGaN/GaN HEMTs
S Onoda, A Hasuike, Y Nabeshima… - … on Nuclear Science, 2013 - ieeexplore.ieee.org
Transient currents in AlGaN/GaN High Electron Mobility Transistors (HEMTs) induced by
focused ion beams are measured. Enhanced charge collection occurs in the on-and pinch …
focused ion beams are measured. Enhanced charge collection occurs in the on-and pinch …
Single-event damage observed in GaN-on-Si HEMTs for power control applications
E Mizuta, S Kuboyama, Y Nakada… - … on Nuclear Science, 2018 - ieeexplore.ieee.org
The single-event damage observed in AlGaN/GaN high-electron mobility transistors
(HEMTs) was investigated. For power control applications, normally off operation is …
(HEMTs) was investigated. For power control applications, normally off operation is …
Simulation study of single-event burnout in hardened GaN MISFET
XX Fei, Y Wang, B Sun, J Xing, W Wei, CY Li - Radiation Physics and …, 2023 - Elsevier
This paper presents simulation results of a single event burnout (SEB), for a hardened GaN
metal-insulator-semiconductor field-effect transistor (MISFET), employing a dual channel p …
metal-insulator-semiconductor field-effect transistor (MISFET), employing a dual channel p …
High-fluence proton-induced degradation on AlGaN/GaN high-electron-mobility transistors
S Yue, Z Lei, C Peng, X Zhong, J Wang… - … on Nuclear Science, 2020 - ieeexplore.ieee.org
The electrical characteristics and low-frequency noise (LFN) of AlGaN/GaN high-electron-
mobility transistors (HEMTs) after 3-MeV proton irradiation up to a total dose of 5.0× 10 14 …
mobility transistors (HEMTs) after 3-MeV proton irradiation up to a total dose of 5.0× 10 14 …