High-speed DD transmission using a silicon receiver co-integrated with a 28-nm CMOS gain-tunable fully-differential TIA

Y Hong, K Li, C Lacava, S Liu, DJ Thomson… - Journal of Lightwave …, 2021 - opg.optica.org
We report> 100-Gb/s direct-detection (DD) transmission using an integrated silicon optical
receiver, which comprised a fully-differential 28-nm complementary metal-oxide …

Degradation mechanisms in germanium electro-absorption modulators

A Tsiara, A Leśniewska, P Roussel… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
Reliability analysis on Ge Electro-Absorption Modulators suggest that different physical
mechanisms are involved in the dark current degradation during electrical stress. An" …

50 Gbps vertical separate absorption charge multiplication Ge/Si avalanche waveguide photodetectors integrated in a 300-mm Si photonics platform

A Tsiara, M Berciano, D Yudistira, R Loo… - 49th European …, 2023 - ieeexplore.ieee.org
We report 35 GHz Ge-on-Si avalanche photodetectors integrated on 300-mm SOI wafers,
enabling high-quality eye diagrams at 50 Gbps NRZ, and low thermal drift of the breakdown …

Narrow slot fully-crystalline accumulation modulator for low-power optoelectronic interconnection

J Byers - 2020 - eprints.soton.ac.uk
The information and telecommunication industry relies heavily on the opto-electronic (OE)
modulator link between electronic computation and optical data transmission. Asglobal data …