Wurtzite and fluorite ferroelectric materials for electronic memory
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …
continued research interest since their discovery more than 100 years ago. The …
Dawn of nitride ferroelectric semiconductors: from materials to devices
III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …
been extensively investigated in the past decades. New functionalities, such as …
Post-CMOS compatible aluminum scandium nitride/2D channel ferroelectric field-effect-transistor memory
Recent advances in oxide ferroelectric (FE) materials have rejuvenated the field of low-
power, nonvolatile memories and made FE memories a commercial reality. Despite these …
power, nonvolatile memories and made FE memories a commercial reality. Despite these …
Thermal conductivity of aluminum scandium nitride for 5G mobile applications and beyond
Radio frequency (RF) microelectromechanical systems (MEMS) based on Al1–x Sc x N are
replacing AlN-based devices because of their higher achievable bandwidths, suitable for the …
replacing AlN-based devices because of their higher achievable bandwidths, suitable for the …
Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N
The discovery of ferroelectricity in aluminum scandium nitride (Al1–x Sc x N) opens
technological perspectives for harsh environments and space-related memory applications …
technological perspectives for harsh environments and space-related memory applications …
Controlling residual stress and suppression of anomalous grains in aluminum scandium nitride films grown directly on silicon
R Beaucejour, V Roebisch, A Kochhar… - Journal of …, 2022 - ieeexplore.ieee.org
Deposition of Aluminum Scandium Nitride (AlScN) films directly on Silicon at high Sc
alloying levels, with controlled stress, and free of anomalous grains (AOGs) is demonstrated …
alloying levels, with controlled stress, and free of anomalous grains (AOGs) is demonstrated …
Highly doped AlScN 3.5 GHz XBAW resonators with 16% k2eff for 5G RF filter applications
The authors report 3.5 GHz bulk acoustic wave resonators with an observed k<; span style="
font-size: 14.5 px;"> 2<;/span> eff in the range of 14.2 to 16%, which the authors believe to …
font-size: 14.5 px;"> 2<;/span> eff in the range of 14.2 to 16%, which the authors believe to …
Ultrathin Pt and Mo films on Al1–xScxN: an interface investigation
Aluminum scandium nitride (Al 1–x Sc x N) with attractive ferroelectric and piezoelectric
properties is a promising material for next-generation device applications. However, the …
properties is a promising material for next-generation device applications. However, the …
Characterization of Ferroelectric Al0.7Sc0.3N Thin Film on Pt and Mo Electrodes
In the past decade, aluminum scandium nitride (AlScN) with a high Sc content has shown
ferroelectric properties, which provides a new option for CMOS-process-compatible …
ferroelectric properties, which provides a new option for CMOS-process-compatible …
Engineering strain and texture in ferroelectric scandium-doped aluminium nitride
Materials and interfacial engineering yielded ferroelectricity in Al1–x Sc x N films of 15 nm
thickness for the first time. Bottom electrodes were explored and selected for optimal …
thickness for the first time. Bottom electrodes were explored and selected for optimal …