Group-III-nitride semiconductors, including AlN, GaN, InN and their ternary, quaternary
compounds, are promising electronic and optoelectronic materials for the applications in …

In the last decade, we have seen very rapid and significant developments in Raman
scattering experiments on GaN and related nitride compounds: the Γ-point phonon …

Two-dimensional (2D) transition-metal dichalcogenide alloys with tunable band gaps have
promising applications in nanoelectronics and optoelectronics. Characterization of …

As one of the most promising cathode materials in sodium‐ion batteries, manganese‐based
layered oxides have aroused wide attention due to their high specific capacity and plentiful …

Efficient bandgap engineering is a significant strategy for the utilization of widely concerned
two-dimensional (2D) layered materials in versatile devices such as nanoelectronics …

This Letter reports on the epitaxial growth, characterization, and device characteristics of
crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si (111) substrate. The total …

With growing research interest in liquid metals, such as Ga and Ga-based alloys,
understanding their behaviours at reduced dimensions is becoming of more fundamental …

We report on the growth of Al x Ga 1− x N nanowires by plasma-assisted molecular beam
epitaxy for x in the 0.3–0.8 range. Based on a combination of macro-and micro …

This work presents a systematic study of stress and strain of Al x Ga1− x N/AlN with
composition ranging from GaN to AlN, grown on ac-plane sapphire by metal-organic …

The paper reports on elaboration of plasma‐assisted molecular beam epitaxy (MBE) of
AlxGa1− xN‐based quantum‐well (QW) structures with high Al content (up to 50% in the …