Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
Degradation and recovery of GaN HEMTs in overvoltage hard switching near breakdown voltage
GaN high electron mobility transistors (HEMTs) have limited avalanche capability and
usually fail catastrophically in voltage overshoot up to their dynamic breakdown voltage (BV …
usually fail catastrophically in voltage overshoot up to their dynamic breakdown voltage (BV …
Output capacitance loss of GaN HEMTs in steady-state switching
The output capacitance () loss, a loss produced when the device's output capacitor is
charged and discharged, has become a concern for GaN high electron mobility transistors …
charged and discharged, has become a concern for GaN high electron mobility transistors …
In-situ RDS(on) Characterization and Lifetime Projection of GaN HEMTs Under Repetitive Overvoltage Switching
R Zhang, R Garcia, R Strittmatter… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Transient voltage overshoot is a common phenomenon in GaN high electron mobility
transistors (HEMTs) under high slew rate switching conditions. The dynamic parametric …
transistors (HEMTs) under high slew rate switching conditions. The dynamic parametric …
Analysis of energy loss in GaN E-mode devices under UIS stresses
This article analyzes the energy loss E loss in GaN enhancement-mode (E-mode) devices
under unclamped inductive switching (UIS) stresses. Based on the second-order circuit …
under unclamped inductive switching (UIS) stresses. Based on the second-order circuit …
Degradation behavior and mechanism of GaN HEMTs with P-type gate in the third quadrant under repetitive surge current stress
In this article, the degradation behavior and mechanism of GaN high-electron-mobility
transistors (HEMTs) with p-type gate in the third quadrant under repetitive surge current …
transistors (HEMTs) with p-type gate in the third quadrant under repetitive surge current …
On the Abnormal Reduction and Recovery of Dynamic RON Under UIS Stress in Schottky p-GaN Gate HEMTs
In this letter, the abnormal reduction and recovery of dynamic R ON are observed under
unclamped-inductive-switching (UIS) stress in Schottky p-GaN gate HEMTs. The reduction of …
unclamped-inductive-switching (UIS) stress in Schottky p-GaN gate HEMTs. The reduction of …
Investigations on electrical parameters degradation and recovery of E-mode GaN high-electron mobility transistors under repetitive unclamped inductive switching …
XB Xu, B Li, YQ Chen, ZH Wu, ZY He… - Semiconductor …, 2020 - iopscience.iop.org
During no or minimal avalanche capability, the surge ruggedness of the E-mode AlGaN/GaN
high-electron mobility transistors (HEMTs) with p-GaN gate has not been fully understood …
high-electron mobility transistors (HEMTs) with p-GaN gate has not been fully understood …
Performance of wide-bandgap discrete and module cascodes at sub-1 kV: GaN vs. SiC
Wide-bandgap (WBG) based cascode devices combine the advantages of the gate
driveability and reliability of silicon MOSFETs with the power conversion efficiency and …
driveability and reliability of silicon MOSFETs with the power conversion efficiency and …
Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation
X Li, X Wang, M Liu, K Zhu, G Shui, Q Zheng… - IEEE …, 2024 - ieeexplore.ieee.org
In this paper, we investigated an experimental analysis of the degradation caused by low
dose rate irradiation in GaN-based high-electron-mobility transistors (HEMTs) with a p-type …
dose rate irradiation in GaN-based high-electron-mobility transistors (HEMTs) with a p-type …