Spin-dependent magnetotransport through a ring due to spin-orbit interaction

B Molnár, FM Peeters, P Vasilopoulos - Physical Review B, 2004 - APS
Electron transport through a one-dimensional ring connected with two external leads, in the
presence of spin-orbit interaction (SOI) of strength α and a perpendicular magnetic field is …

Spintronics and spintronics materials

VA Ivanov, TG Aminov, VM Novotortsev… - Russian Chemical …, 2004 - Springer
The review concerns the fundamentals of spintronics (spin-transport electronics). The
material covers spin-spin interactions and spin relaxation in semiconductors as well as spin …

Spin-current modulation in hexagonal buckled ZnTe and CdTe monolayers for self-powered flexible-piezo-spintronic devices

MK Mohanta, F Is, A Kishore… - ACS Applied Materials & …, 2021 - ACS Publications
The next-generation spintronic device demands the gated control of spin transport across
the semiconducting channel through the replacement of the external gate voltage source by …

Quantum rings as electron spin beam splitters

P Földi, O Kálmán, MG Benedict, FM Peeters - Physical Review B …, 2006 - APS
Quantum interference and spin-orbit interaction in a one-dimensional mesoscopic
semiconductor ring with one input and two output leads can act as a spin beam splitter …

Decoherence of transported spin in multichannel spin-orbit-coupled spintronic devices: Scattering approach to spin-density matrix from the ballistic to the localized …

BK Nikolić, S Souma - Physical Review B—Condensed Matter and Materials …, 2005 - APS
By viewing current in the detecting lead of a spintronic device as being an ensemble of
flowing spins corresponding to a mixed quantum state, where each spin itself is generally …

Spintronic single-qubit gate based on a quantum ring with spin-orbit interaction

P Földi, B Molnár, MG Benedict, FM Peeters - Physical Review B—Condensed …, 2005 - APS
In a quantum ring connected with two external leads, the spin properties of an incoming
electron are modified by the spin-orbit interaction, resulting in a transformation of the qubit …

MOS-based spin devices for reconfigurable logic

M Tanaka, S Sugahara - IEEE Transactions on Electron …, 2007 - ieeexplore.ieee.org
Semiconductor-based spin transistors are expected to give a new spin degree of freedom in
future electronics. While many different spin transistors have been proposed and studied …

Intersubband-induced spin-orbit interaction in quantum wells

RS Calsaverini, E Bernardes, JC Egues, D Loss - Physical Review B …, 2008 - APS
Recently, we have found an additional spin-orbit (SO) interaction in quantum wells with two
subbands [Bernardes, Phys. Rev. Lett. 99, 076603 (2007)]. This new SO term is nonzero …

Dissipationless layertronics in axion insulator MnBi2Te4

S Li, M Gong, S Cheng, H Jiang… - National Science …, 2024 - academic.oup.com
Surface electrons in axion insulators are endowed with a topological layer degree of
freedom followed by exotic transport phenomena, eg, the layer Hall effect. Here, we propose …

Spin transport of electrons through quantum wires with a spatially modulated Rashba spin-orbit interaction

XF Wang - Physical Review B, 2004 - APS
We study ballistic transport of spin-polarized electrons through quantum wires in which the
Rashba spin-orbit interaction (SOI) is spatially modulated. Subband mixing, due to SOI …