Post-wet chemical treatments using sulfuric acid and hydrogen peroxide mixture (SPM) or
tetramethyl ammonium hydroxide (TMAH) solutions were performed to reduce dry etch …

Neodymium-doped aluminum (Al-Nd) was used as a gate electrode and was anodized,
forming a layer of Nd: Al 2 O 3 as the dielectric for indium-zinc oxide (IZO) thin-film …

InGaZnO (IGZO) thin-film transistors (TFTs) with back channel modified by different kinds of
self-assembled monolayers (SAMs) were fabricated. The mobility and electrical stability of …

Solution-processed neodymium-substituted indium oxide (InNdO) thin-film transistors (TFTs)
based on gel-like aqueous precursors were fabricated with a surface-selective deposition …

The preparation and electrical properties of N-doped ZnSnO (ZTO: N) thin film transistor
(TFT) with a staggered bottom-gate structure were studied in this paper. ZTO: N thin film …

Gallium oxide (Ga 2 O 3) is widely used as an ultra-wide bandgap semiconductor in
emerging optoelectronics. Recent works show that Ga 2 O 3 could be a promising high-κ …

Thin-film transistors (TFTs) with neodymium-substituted indium oxide (InNdO) channel layer
were demonstrated. The structural properties of the InNdO films as a function of annealing …

Anodically oxidized, ultra-thin (d< 10 nm) aluminium films emerge as the dielectric of choice
for low-cost thin film capacitors (TFCs), thin film transistors (TFTs), and bio-and chemical …

In this work, we performed a systematic study of the physical properties of amorphous
Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O …

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO)
thin-film transistor (TFT) based on alumina oxide (Al 2 O 3) passivation layer (PVL) and …