Since the first studies in the late 1970s most of the researches on Si1− xGex nanostructures
have been motivated by their potential applications in micro, opto and nanoelectronic …

Obtaining uniform silicon concentration, especially with low concentrations (ranging from 1×
10 16 to 1× 10 18 cm− 3) by molecular beam epitaxy, has been challenging due to oxidation …

The results of recent studies of the structural morphological transformations of Si (111) and
Si (100) surfaces using in situ ultrahigh-vacuum reflection electron microscopy (UHV REM) …

The critical terrace width λ for 2D island nucleation and growth (2DNG) on large-scale
atomically flat terraces of a step-bunched Si (111)-(7× 7) surface has been studied by in situ …

A data-driven approach is used to describe the growth of crystals and thin films based on
high-throughput numerical experiments. This way the Machine Learning (ML) helps to …

Bunching and meandering instability of steps at the 4H-SiC (0001) surface is studied by the
kinetic Monte Carlo simulation method. Change in the character of step instability is …

Epitaxial growth on a surface vicinal to a high-symmetry crystallographic plane occurs
through the propagation of atomic steps, a process called step-flow growth. In some …

The step configuration of a vicinal Si surface is studied under electromigration and a
gradient of temperature. An abrupt transition (ΔT= 4° C) from step-meandering to step …

The effect of step–step exclusion on growing vicinal surfaces destabilized by a step-up (SU)
or step-down (SD) driving force is extensively studied in diffusion-limited (DL) and kinetics …

Using a Monte Carlo method on a lattice model of a vicinal surface with a point-contact-type
step-step attraction, we show that, at low temperature and near equilibrium, there is an …