Research progress of III–V laser bonding to Si
B Ren, Y Hou, Y Liang - Journal of Semiconductors, 2016 - iopscience.iop.org
The vigorous development of silicon photonics makes a silicon-based light source essential
for optoelectronics' integration. Bonding of III–V/Si hybrid laser has developed rapidly in the …
for optoelectronics' integration. Bonding of III–V/Si hybrid laser has developed rapidly in the …
Optoelectronic platform and technology
W Shi, W Lv, T Sun, B Zhang - Frontiers of Information Technology & …, 2019 - Springer
Optoelectronic technology is a new technology formed by the combination of photon
technology and electronic technology. Photon technology can cause an industrial revolution …
technology and electronic technology. Photon technology can cause an industrial revolution …
III–V compound materials and lasers on silicon
W Yang, Y Li, F Meng, H Yu, M Wang… - Journal of …, 2019 - iopscience.iop.org
Silicon-based photonic integration has attracted the interest of semiconductor scientists
because it has high luminous efficiency and electron mobility. Breakthroughs have been …
because it has high luminous efficiency and electron mobility. Breakthroughs have been …
4–λ hybrid InGaAsP-Si evanescent laser array with low power consumption for on-chip optical interconnects
Y Li, H Yu, W Yang, C Ge, P Wang, F Meng… - Photonics …, 2019 - opg.optica.org
A 4–λ hybrid InGaAsP-Si evanescent laser array is obtained by bonding III–V distributed
feedback lasers to a silicon on insulator (SOI) substrate using a selective area metal …
feedback lasers to a silicon on insulator (SOI) substrate using a selective area metal …
[HTML][HTML] Comparative modeling results for ridge waveguide MQW and hybrid Si/III-V lasers
In this study, 1550 nm ridge waveguide multi quantum well (MQW) and hybrid Si/III-V lasers
are simulated and the results are studied in a comparative setting. InGaAsP active layers …
are simulated and the results are studied in a comparative setting. InGaAsP active layers …
A hybrid single-mode laser based on slotted silicon waveguides
M Li, L Zhang, H Yu, L Yuan, Q Kan… - IEEE Photonics …, 2016 - ieeexplore.ieee.org
An InGaAsP-Si hybrid single-mode laser based on etched slots in silicon waveguides was
demonstrated operating at 1543 nm. The InGaAsP gain structure was bonded onto a …
demonstrated operating at 1543 nm. The InGaAsP gain structure was bonded onto a …
1550-nm Evanescent Hybrid InGaAsP–Si Laser With Buried Ridge Stripe Structure
H Yu, L Yuan, L Tao, W Chen, Y Li… - IEEE Photonics …, 2016 - ieeexplore.ieee.org
An evanescently coupled InGaAsP-Si hybrid laser with a buried ridge stripe (BRS) structure
based on a selective area metal bonding method is demonstrated. There are the …
based on a selective area metal bonding method is demonstrated. There are the …
Numerical Analysis and Lasing Characteristics of GaInAsP Double-Heterostructure Lasers on InP/Si Substrate
GK Periyanayagam, K Shimomura - Journal of Electronic Materials, 2022 - Springer
Deposition of GaInAsP crystalline layer structures on a directly bonded InP/Si substrate for
the fabrication of a laser diode device was explored using conventional metal–organic vapor …
the fabrication of a laser diode device was explored using conventional metal–organic vapor …
Hybrid single-mode laser based on graphene Bragg gratings on silicon
We exploit distributed optoelectronic properties enabled by graphene Bragg gratings
(GBGs) to realize a hybrid single-mode laser on silicon. This hybrid laser achieves single …
(GBGs) to realize a hybrid single-mode laser on silicon. This hybrid laser achieves single …
Design and fabrication of 1.55 μm broad area slotted single-mode Fabry–Perot lasers
We present a single-mode laser on a p-InP substrate suitable for bonding on silicon-on-
insulator (SOI) wafer. The laser can realize single mode lasing with etching perturbing slots …
insulator (SOI) wafer. The laser can realize single mode lasing with etching perturbing slots …