N Bert, V Ushanov, L Snigirev, D Kirilenko, V Ulin… - Materials, 2022 - mdpi.com
AlGaAsSb and AlGaAs films as thick as 1 μm with Al content as high as 60% were successfully grown by low-temperature (200° C) MBE. To overcome the well-known problem …
We reveal the feasibility of the localized surface plasmon resonance in a system of Bi nanoparticles embedded into an Al x Ga 1− x As semiconductor matrix. With an ab initio …
We perform numerical modeling of the optical absorption spectra of metamaterials composed of systems of semimetal antimony nanoparticles embedded into Al x Ga 1− x As …
MG Kucherenko, VM Nalbandyan… - Journal of Optical …, 2021 - opg.optica.org
This paper discusses the characteristics of the electric field inside and outside an electronically excited quantum dot. It shows that the electric potential behaves differently …
We analyze the possibility to realize a localized surface plasmon resonance in metamaterials composed of As 1− z Sb z nanoparticles embedded in an Al x Ga 1− x As 1− y …
LA Snigirev, VI Ushanov, AA Ivanov, NA Bert… - Semiconductors, 2023 - Springer
Abstract epitaxial layers of Al x Ga1–x As1–y Sb y with an aluminum content x~ 60% and antimony content y~ 3% were successfully grown by molecular-beam epitaxy at low …
Quantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver …
On the basis of a specially created theoretical model, the luminescence spectra and the rate of nonradiative transmission of energy from the exciton-activated quantum dot (QD) to the …
In the recent years the scientific community demonstrates an increasing interest in the study of nanoparticles and their properties, such as interaction with a surface and the …