InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering
Micro or submicron scale light-emitting diodes (µLEDs) have been extensively studied
recently as the next-generation display technology. It is desired that µLEDs exhibit high …
recently as the next-generation display technology. It is desired that µLEDs exhibit high …
N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs
The efficiency of conventional quantum well light-emitting diodes (LEDs) decreases
drastically with reducing areal size. Here we show that such a critical size scaling issue of …
drastically with reducing areal size. Here we show that such a critical size scaling issue of …
[HTML][HTML] High internal quantum efficiency of long wavelength InGaN quantum wells
Time-resolved and quasi-cw photoluminescence (PL) spectroscopy was applied to measure
the internal quantum efficiency (IQE) of c-plane InGaN single quantum wells (QWs) grown …
the internal quantum efficiency (IQE) of c-plane InGaN single quantum wells (QWs) grown …
Recombination rate analysis of ingan-based red-emitting light-emitting diodes
The recombination rates are measured and analyzed for red-emitting InGaN light-emitting
diodes (LEDs) to better understand the factors that limit their efficiency. InGaN/AlGaN/GaN …
diodes (LEDs) to better understand the factors that limit their efficiency. InGaN/AlGaN/GaN …
Correlation between optical and structural characteristics in coaxial GaInN/GaN multiple quantum shell nanowires with AlGaN spacers
W Lu, Y Miyamoto, R Okuda, K Ito, N Sone… - … Applied Materials & …, 2020 - ACS Publications
High crystalline quality coaxial GaInN/GaN multiple quantum shells (MQSs) grown on
dislocation-free nanowires are highly in demand for efficient white-/micro-light-emitting …
dislocation-free nanowires are highly in demand for efficient white-/micro-light-emitting …
A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array
Nanorod array and planar green-emission InGaN/GaN multi-quantum well (MQW) LEDs
were fabricated by lithography, nano-imprinting, and top–down etching technology. The …
were fabricated by lithography, nano-imprinting, and top–down etching technology. The …
GaN/InGaN LED Sidewall Defects Analysis by Cathodoluminescence and Photosensitive Kelvin Probe Force Microscopy
P González-Izquierdo, N Rochat, K Sakowski… - ACS …, 2024 - ACS Publications
This paper delves into the impact of sidewall defects on a GaN/InGaN epi-LED, utilizing
advanced analytical techniques with nanometric resolution: cathodoluminescence (CL) and …
advanced analytical techniques with nanometric resolution: cathodoluminescence (CL) and …
Kelvin Probe Force Microscopy under variable illumination: a novel technique to unveil charge carrier dynamics in GaN
P González-Izquierdo, N Rochat… - The Journal of …, 2023 - ACS Publications
GaN is a widely used material for optical and power devices. However, the performance of
GaN-based devices is often reduced by charge trapping processes due to defect levels in …
GaN-based devices is often reduced by charge trapping processes due to defect levels in …
Shifting LED emission from blue to the green gap spectral range using In0. 12Ga0. 88N relaxed templates
In y Ga 1-y N templates are grown with y≤ 13.5% and a few nm surface roughness. These
templates are used successfully to address two of the main issues facing long wavelength …
templates are used successfully to address two of the main issues facing long wavelength …
[HTML][HTML] 基于Ⅲ 族氮化物的Micro⁃ LED 挑战及潜在解决方案
刘召军， 伏桂月 - Chinese Journal of Liquid Crystals and …, 2023 - opticsjournal.net
摘要Micro-LED 的发展被认为是世界上发展最快的显示技术之一, 它在可见光通信应用,
大型平板显示, 虚拟现实及可穿戴显示, 电视和照明, 光遗传学和神经界面的光源等各个领域中 …
大型平板显示, 虚拟现实及可穿戴显示, 电视和照明, 光遗传学和神经界面的光源等各个领域中 …